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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IXTP3N110	RFQ VIEW	PDF RFQ	951 In-stock	IXYS	MOSFET N-CH 1100V 3A TO-220		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	150W (Tc)	N-Channel	-	1100V	3A (Tc)	4 Ohm @ 1.5A, 10V	5V @ 250µA	42nC @ 10V	1350pF @ 25V	10V	±20V
	IXTA3N110	RFQ VIEW	PDF RFQ	3,928 In-stock	IXYS	MOSFET N-CH 1100V 3A TO-263		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263 (IXTA)	150W (Tc)	N-Channel	-	1100V	3A (Tc)	4 Ohm @ 1.5A, 10V	5V @ 250µA	42nC @ 10V	1350pF @ 25V	10V	±20V
	BUZ80A	RFQ VIEW	PDF RFQ	942 In-stock	Infineon Technologies	MOSFET N-CH 800V 3.6A TO-220AB		SIPMOS®	Discontinued at Digi-Key	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	100W (Tc)	N-Channel	-	800V	3.6A (Tc)	3 Ohm @ 2A, 10V	4V @ 1mA	-	1350pF @ 25V	10V	±20V
	TK10A60D(STA4,Q,M)	RFQ VIEW	PDF RFQ	3,257 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 10A TO220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	600V	10A (Ta)	750 mOhm @ 5A, 10V	4V @ 1mA	25nC @ 10V	1350pF @ 25V	10V	±30V
	TK11A55D(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,382 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 11A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	550V	11A (Ta)	630 mOhm @ 5.5A, 10V	4V @ 1mA	25nC @ 10V	1350pF @ 25V	10V	±30V
	TK12A53D(STA4,Q,M)	RFQ VIEW	PDF RFQ	1,985 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 525V 12A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	525V	12A (Ta)	580 mOhm @ 6A, 10V	4V @ 1mA	25nC @ 10V	1350pF @ 25V	10V	±30V
	TK13A45D(STA4,Q,M)	RFQ VIEW	PDF RFQ	1,003 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 13A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	450V	13A (Ta)	460 mOhm @ 6.5A, 10V	4V @ 1mA	25nC @ 10V	1350pF @ 25V	10V	±30V
	TK12A50D(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,648 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 12A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	500V	12A (Ta)	520 mOhm @ 6A, 10V	4V @ 1mA	25nC @ 10V	1350pF @ 25V	10V	±30V
	STP6NK90Z	RFQ VIEW	PDF RFQ	2,979 In-stock	STMicroelectronics	MOSFET N-CH 900V 5.8A TO-220		SuperMESH™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	140W (Tc)	N-Channel	-	900V	5.8A (Tc)	2 Ohm @ 2.9A, 10V	4.5V @ 100µA	60.5nC @ 10V	1350pF @ 25V	10V	±30V
	STP6NK90ZFP	RFQ VIEW	PDF RFQ	933 In-stock	STMicroelectronics	MOSFET N-CH 900V 5.8A TO-220FP		SuperMESH™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FP	30W (Tc)	N-Channel	-	900V	5.8A (Tc)	2 Ohm @ 2.9A, 10V	4.5V @ 100µA	60.5nC @ 10V	1350pF @ 25V	10V	±30V
	IXTP3N120	RFQ VIEW	PDF RFQ	3,153 In-stock	IXYS	MOSFET N-CH 1.2KV 3A TO-220AB		HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	200W (Tc)	N-Channel	-	1200V	3A (Tc)	4.5 Ohm @ 500mA, 10V	5V @ 250µA	42nC @ 10V	1350pF @ 25V	10V	±20V
	IXTA3N120	RFQ VIEW	PDF RFQ	1,660 In-stock	IXYS	MOSFET N-CH 1.2KV 3A TO-263		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263 (IXTA)	200W (Tc)	N-Channel	-	1200V	3A (Tc)	4.5 Ohm @ 1.5A, 10V	5V @ 250µA	42nC @ 10V	1350pF @ 25V	10V	±20V
	TK7J90E,S1E	RFQ VIEW	PDF RFQ	961 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 900V TO-3PN		π-MOSVIII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)	200W (Tc)	N-Channel	-	900V	7A (Ta)	2 Ohm @ 3.5A, 10V	4V @ 700µA	32nC @ 10V	1350pF @ 25V	10V	±30V
	TK6A80E,S4X	RFQ VIEW	PDF RFQ	3,537 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 800V TO220SIS		π-MOSVIII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	800V	6A (Ta)	1.7 Ohm @ 3A, 10V	4V @ 600µA	32nC @ 10V	1350pF @ 25V	10V	±30V
	TK7A90E,S4X	RFQ VIEW	PDF RFQ	1,980 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 900V TO220SIS		π-MOSVIII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	900V	7A (Ta)	2 Ohm @ 3.5A, 10V	4V @ 700µA	32nC @ 10V	1350pF @ 25V	10V	±30V
	STW7NK90Z	RFQ VIEW	PDF RFQ	1,806 In-stock	STMicroelectronics	MOSFET N-CH 900V 5.8A TO-247		SuperMESH™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3	140W (Tc)	N-Channel	-	900V	5.8A (Tc)	2 Ohm @ 2.9A, 10V	4.5V @ 100µA	60.5nC @ 10V	1350pF @ 25V	10V	±30V

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