- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
1,580
In-stock
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Infineon Technologies | MOSFET N-CH 100V 10.3A TO-220 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 50W (Tc) | N-Channel | 100V | 10.3A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 19.4nC @ 10V | 426pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,255
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 10.3A I2PAK | SIPMOS® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 50W (Tc) | N-Channel | 100V | 10.3A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 19.4nC @ 10V | 426pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,503
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 800V 5.5A ITO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 25W (Tc) | N-Channel | 800V | 5.5A (Tc) | 1.2 Ohm @ 1.8A, 10V | 4V @ 250µA | 19.4nC @ 10V | 685pF @ 100V | 10V | ±30V | |||
|
VIEW |
1,192
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 800V 5.5A TO262S | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Short Leads, I²Pak | TO-262S (I2PAK) | 110W (Tc) | N-Channel | 800V | 5.5A (Tc) | 1.2 Ohm @ 1.8A, 10V | 4V @ 250µA | 19.4nC @ 10V | 685pF @ 100V | 10V | ±30V | |||
|
VIEW |
3,077
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 600V 9.5A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 83W (Tc) | N-Channel | 600V | 9.5A (Tc) | 380 mOhm @ 2.85A, 10V | 4V @ 250µA | 19.4nC @ 10V | 795pF @ 100V | 10V | ±30V | |||
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|
VIEW |
1,296
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 800V 5.5A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 110W (Tc) | N-Channel | 800V | 5.5A (Tc) | 1.2 Ohm @ 2.75A, 10V | 4V @ 250µA | 19.4nC @ 10V | 685pF @ 100V | 10V | ±30V | |||
