Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PHX8NQ11T,127
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3,192
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NXP USA Inc. MOSFET N-CH 110V 7.5A SOT186A TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 27.7W (Tc) N-Channel - 110V 7.5A (Tc) 180 mOhm @ 6A, 10V 4V @ 1mA 14.7nC @ 10V 360pF @ 25V 10V ±20V
PHU11NQ10T,127
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RFQ
2,291
In-stock
NXP USA Inc. MOSFET N-CH 100V 10.9A SOT533 TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 57.7W (Tc) N-Channel - 100V 10.9A (Tc) 180 mOhm @ 9A, 10V 4V @ 1mA 14.7nC @ 10V 360pF @ 25V 10V ±20V