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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK4A65DA(STA4,Q,M)	RFQ VIEW	PDF RFQ	3,460 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 3.5A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	35W (Tc)	N-Channel	-	650V	3.5A (Ta)	1.9 Ohm @ 1.8A, 10V	4.4V @ 1mA	12nC @ 10V	600pF @ 25V	10V	±30V
	2SK3566(STA4,Q,M)	RFQ VIEW	PDF RFQ	3,977 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 900V 2.5A TO-220SIS		π-MOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	40W (Tc)	N-Channel	-	900V	2.5A (Ta)	6.4 Ohm @ 1.5A, 10V	4V @ 1mA	12nC @ 10V	470pF @ 25V	10V	±30V
	TK6A60W,S4VX	RFQ VIEW	PDF RFQ	2,384 In-stock	Toshiba Semiconductor and Storage	MOSFET N CH 600V 6.2A TO-220SIS		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	30W (Tc)	N-Channel	Super Junction	600V	6.2A (Ta)	750 mOhm @ 3.1A, 10V	3.7V @ 310µA	12nC @ 10V	390pF @ 300V	10V	±30V
	TSM4N60ECH C5G	RFQ VIEW	PDF RFQ	2,101 In-stock	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 4A TO251		-	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251 (IPAK)	86.2W (Tc)	N-Channel	-	600V	4A (Tc)	2.5 Ohm @ 2A, 10V	5V @ 250µA	12nC @ 10V	545pF @ 25V	10V	±30V
	TK6Q60W,S1VQ	RFQ VIEW	PDF RFQ	1,343 In-stock	Toshiba Semiconductor and Storage	MOSFET N CH 600V 6.2A IPAK		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-251-3 Stub Leads, IPak	I-PAK	60W (Tc)	N-Channel	Super Junction	600V	6.2A (Ta)	820 mOhm @ 3.1A, 10V	3.7V @ 310µA	12nC @ 10V	390pF @ 300V	10V	±30V
	TK4A60D(STA4,Q,M)	RFQ VIEW	PDF RFQ	3,356 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 4A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	35W (Tc)	N-Channel	-	600V	4A (Ta)	1.7 Ohm @ 2A, 10V	4.4V @ 1mA	12nC @ 10V	600pF @ 25V	10V	±30V
	STU2LN60K3	RFQ VIEW	PDF RFQ	2,834 In-stock	STMicroelectronics	MOSFET N CH 600V 2A IPAK		SuperMESH3™	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-PAK	45W (Tc)	N-Channel	-	600V	2A (Tc)	4.5 Ohm @ 1A, 10V	4.5V @ 50µA	12nC @ 10V	235pF @ 50V	10V	±30V
	STF2LN60K3	RFQ VIEW	PDF RFQ	3,028 In-stock	STMicroelectronics	MOSFET N CH 600V 2A TO-220FP		SuperMESH3™	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FP	20W (Tc)	N-Channel	-	600V	2A (Tc)	4.5 Ohm @ 1A, 10V	4.5V @ 50µA	12nC @ 10V	235pF @ 50V	10V	±30V
	TK7A50D(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,538 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 7A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	35W (Tc)	N-Channel	-	500V	7A (Ta)	1.22 Ohm @ 3.5A, 10V	4.4V @ 1mA	12nC @ 10V	600pF @ 25V	10V	±30V
	TK6A53D(STA4,Q,M)	RFQ VIEW	PDF RFQ	1,864 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 525V 6A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	35W (Tc)	N-Channel	-	525V	6A (Ta)	1.3 Ohm @ 3A, 10V	4.4V @ 1mA	12nC @ 10V	600pF @ 25V	10V	±30V
	TK6A55DA(STA4,Q,M)	RFQ VIEW	PDF RFQ	1,065 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 5.5A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	35W (Tc)	N-Channel	-	550V	5.5A (Ta)	1.48 Ohm @ 2.8A, 10V	4.4V @ 1mA	12nC @ 10V	600pF @ 25V	10V	±30V

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