- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,291
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 80V 55A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 72W (Tc) | N-Channel | - | 80V | 55A (Tc) | 12.2 mOhm @ 17.5A, 10V | 4V @ 300µA | 25nC @ 10V | 1700pF @ 40V | 10V | ±20V | |||
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2,633
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 52A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 72W (Tc) | N-Channel | - | 100V | 52A (Tc) | 13.8 mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | 1800pF @ 50V | 10V | ±20V | |||
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VIEW |
3,209
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 60V 40A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 67W (Tc) | N-Channel | - | 60V | 40A (Ta) | 10.4 mOhm @ 20A, 10V | 4V @ 300µA | 23nC @ 10V | 1700pF @ 30V | 10V | ±20V |