Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM4N70CI C0G
RFQ
VIEW
RFQ
1,338
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 700V 3.5A ITO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 56W (Tc) N-Channel - 700V 3.5A (Tc) 3.3 Ohm @ 2A, 10V 4V @ 250µA 14nC @ 10V 595pF @ 25V 10V ±30V
TSM4N70CH C5G
RFQ
VIEW
RFQ
964
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 700V 3.5A TO251 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 (IPAK) 56W (Tc) N-Channel - 700V 3.5A (Tc) 3.3 Ohm @ 2A, 10V 4V @ 250µA 14nC @ 10V 595pF @ 25V 10V ±30V
STP4NB80
RFQ
VIEW
RFQ
2,377
In-stock
STMicroelectronics MOSFET N-CH 800V 4A TO-220 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 800V 4A (Tc) 3.3 Ohm @ 2A, 10V 5V @ 250µA 29nC @ 10V 920pF @ 25V 10V ±30V
IXFA4N100P
RFQ
VIEW
RFQ
2,148
In-stock
IXYS MOSFET N-CH 1000V 4A D2PAK HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXFA) 150W (Tc) N-Channel - 1000V 4A (Tc) 3.3 Ohm @ 2A, 10V 5V @ 250µA 26nC @ 10V 1456pF @ 25V 10V ±20V
IXFP4N100P
RFQ
VIEW
RFQ
1,137
In-stock
IXYS MOSFET N-CH 1000V 4A TO-220 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 150W (Tc) N-Channel - 1000V 4A (Tc) 3.3 Ohm @ 2A, 10V 5V @ 250µA 26nC @ 10V 1456pF @ 25V 10V ±20V