- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,610
In-stock
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Infineon Technologies | MOSFET N-CH 200V 9.5A TO-263 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | 75W (Tc) | N-Channel | - | 200V | 9.5A (Tc) | 400 mOhm @ 6A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | ||||
VIEW |
1,341
In-stock
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Infineon Technologies | MOSFET N-CH 200V 9.5A TO220AB | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 75W (Tc) | N-Channel | - | 200V | 9.5A (Tc) | 400 mOhm @ 6A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | ||||
VIEW |
2,750
In-stock
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STMicroelectronics | MOSFET N-CH 500V 14A TO-247 | FDmesh™ | Obsolete | Tube | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 160W (Tc) | N-Channel | - | 500V | 14A (Tc) | 400 mOhm @ 6A, 10V | 5V @ 250µA | 12nC @ 10V | 1000pF @ 25V | 10V | ±30V | ||||
VIEW |
1,742
In-stock
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STMicroelectronics | MOSFET N-CH 500V 12A TO-220 | FDmesh™ | Obsolete | Tube | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 160W (Tc) | N-Channel | - | 500V | 12A (Tc) | 400 mOhm @ 6A, 10V | 5V @ 250µA | 12nC @ 10V | 1000pF @ 25V | 10V | ±30V | ||||
VIEW |
927
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 12A (Ta) | 400 mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | 10V | ±30V | ||||
VIEW |
3,467
In-stock
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Infineon Technologies | MOSFET N-CH 200V 9.5A TO220-3 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 75W (Tc) | N-Channel | - | 200V | 9.5A (Tc) | 400 mOhm @ 6A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | ||||
VIEW |
2,657
In-stock
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IXYS-RF | MOSFET N-CH 500V 12A TO247 | HiPerRF™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXFH) | 180W (Tc) | N-Channel | - | 500V | 12A (Tc) | 400 mOhm @ 6A, 10V | 5.5V @ 2.5mA | 54nC @ 10V | 1870pF @ 25V | 10V | ±20V |