Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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MMIX1F360N15T2
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2,448
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IXYS MOSFET N-CH 150V 235A GigaMOS™, TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 24-PowerSMD, 21 Leads 24-SMPD 680W (Tc) N-Channel - 150V 235A (Tc) 4.4 mOhm @ 100A, 10V 5V @ 8mA 715nC @ 10V 47500pF @ 25V 10V ±20V
IPI120N08S404AKSA1
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3,874
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Infineon Technologies MOSFET N-CH TO262-3 Automotive, AEC-Q101, OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 179W (Tc) N-Channel - 80V 120A (Tc) 4.4 mOhm @ 100A, 10V 4V @ 120µA 95nC @ 10V 6450pF @ 25V 10V ±20V
IPP120N08S404AKSA1
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RFQ
1,563
In-stock
Infineon Technologies MOSFET N-CH TO220-3 Automotive, AEC-Q101, OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 179W (Tc) N-Channel - 80V 120A (Tc) 4.4 mOhm @ 100A, 10V 4V @ 120µA 95nC @ 10V 6450pF @ 25V 10V ±20V
IXFN280N085
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RFQ
3,076
In-stock
IXYS MOSFET N-CH 85V 280A SOT-227B HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 700W (Tc) N-Channel - 85V 280A (Tc) 4.4 mOhm @ 100A, 10V 4V @ 8mA 580nC @ 10V 19000pF @ 25V 10V ±20V