Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFT400N075T2
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2,112
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IXYS MOSFET N-CH 75V 400A TO-268 GigaMOS™, HiPerFET™, TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 1000W (Tc) N-Channel - 75V 400A (Tc) 2.3 mOhm @ 100A, 10V 4V @ 250µA 420nC @ 10V 24000pF @ 25V 10V ±20V
AUIRFSL8405
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RFQ
2,290
In-stock
Infineon Technologies MOSFET N-CH 40V 120A TO262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 163W (Tc) N-Channel - 40V 120A (Tc) 2.3 mOhm @ 100A, 10V 3.9V @ 100µA 161nC @ 10V 5193pF @ 25V 10V ±20V
AUIRFS8405
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RFQ
1,486
In-stock
Infineon Technologies MOSFET N-CH 40V 120A D2PAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 163W (Tc) N-Channel - 40V 120A (Tc) 2.3 mOhm @ 100A, 10V 3.9V @ 100µA 161nC @ 10V 5193pF @ 25V 10V ±20V
IXFH400N075T2
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RFQ
3,073
In-stock
IXYS MOSFET N-CH 75V 400A TO-247 GigaMOS™, HiPerFET™, TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 1000W (Tc) N-Channel - 75V 400A (Tc) 2.3 mOhm @ 100A, 10V 4V @ 250µA 420nC @ 10V 24000pF @ 25V 10V ±20V
IPP023NE7N3GXKSA1
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RFQ
2,761
In-stock
Infineon Technologies MOSFET N-CH 75V 120A TO220 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 300W (Tc) N-Channel - 75V 120A (Tc) 2.3 mOhm @ 100A, 10V 3.8V @ 273µA 206nC @ 10V 14400pF @ 37.5V 10V ±20V