Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFR9120
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RFQ
862
In-stock
Vishay Siliconix MOSFET P-CH 100V 5.6A DPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 42W (Tc) P-Channel 100V 5.6A (Tc) 600 mOhm @ 3.4A, 10V 4V @ 250µA 18nC @ 10V 390pF @ 25V 10V ±20V
IRFU9120
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RFQ
2,024
In-stock
Vishay Siliconix MOSFET P-CH 100V 5.6A I-PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 2.5W (Ta), 42W (Tc) P-Channel 100V 5.6A (Tc) 600 mOhm @ 3.4A, 10V 4V @ 250µA 18nC @ 10V 390pF @ 25V 10V ±20V
IPP80R600P7XKSA1
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RFQ
3,016
In-stock
Infineon Technologies MOSFET N-CH 800V 8A TO220-3 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3 60W (Tc) N-Channel 800V 8A (Tc) 600 mOhm @ 3.4A, 10V 3.5V @ 170µA 20nC @ 10V 570pF @ 500V 10V ±20V
IRFU9120PBF
RFQ
VIEW
RFQ
2,270
In-stock
Vishay Siliconix MOSFET P-CH 100V 5.6A I-PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 2.5W (Ta), 42W (Tc) P-Channel 100V 5.6A (Tc) 600 mOhm @ 3.4A, 10V 4V @ 250µA 18nC @ 10V 390pF @ 25V 10V ±20V
IRFR9120PBF
RFQ
VIEW
RFQ
2,433
In-stock
Vishay Siliconix MOSFET P-CH 100V 5.6A DPAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 42W (Tc) P-Channel 100V 5.6A (Tc) 600 mOhm @ 3.4A, 10V 4V @ 250µA 18nC @ 10V 390pF @ 25V 10V ±20V