- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
14 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
819
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 6.7A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.7W (Ta), 43W (Tc) | P-Channel | - | 60V | 6.7A (Tc) | 500 mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
|
VIEW |
920
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 8A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 80W (Tc) | N-Channel | Super Junction | 600V | 8A (Ta) | 500 mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | 570pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,036
In-stock
|
IXYS | MOSFET N-CH 650V 8A X2 TO-252 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 150W (Tc) | N-Channel | - | 650V | 8A (Tc) | 500 mOhm @ 4A, 10V | 5V @ 250µA | 12nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,823
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 6.7A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 43W (Tc) | P-Channel | - | 60V | 6.7A (Tc) | 500 mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,348
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 6.7A TO220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 43W (Tc) | P-Channel | - | 60V | 6.7A (Tc) | 500 mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,492
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 8A (Ta) | 500 mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | 570pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,981
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 6.7A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.7W (Ta), 43W (Tc) | P-Channel | - | 60V | 6.7A (Tc) | 500 mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,360
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 8A TO220FP | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 25W (Tc) | N-Channel | - | 650V | 8A (Tc) | 500 mOhm @ 4A, 10V | 4V @ 250µA | 16.5nC @ 10V | 535pF @ 100V | 10V | ±25V | |||
|
VIEW |
2,282
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 6.7A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 43W (Tc) | P-Channel | - | 60V | 6.7A (Tc) | 500 mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,574
In-stock
|
IXYS | MOSFET N-CH 650V 8A X2 TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 150W (Tc) | N-Channel | - | 650V | 8A (Tc) | 500 mOhm @ 4A, 10V | 5V @ 250µA | 12nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
3,511
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 6.7A D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 43W (Tc) | P-Channel | - | 60V | 6.7A (Tc) | 500 mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,836
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 6.7A TO220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 43W (Tc) | P-Channel | - | 60V | 6.7A (Tc) | 500 mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,519
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 6.7A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 43W (Tc) | P-Channel | - | 60V | 6.7A (Tc) | 500 mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,669
In-stock
|
IXYS | MOSFET N-CH 650V 8A X2 TO-263 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 150W (Tc) | N-Channel | - | 650V | 8A (Tc) | 500 mOhm @ 4A, 10V | 5V @ 250µA | 12nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
