Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQP5N30
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RFQ
2,412
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ON Semiconductor MOSFET N-CH 300V 5.4A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 70W (Tc) N-Channel - 300V 5.4A (Tc) 900 mOhm @ 2.7A, 10V 5V @ 250µA 13nC @ 10V 430pF @ 25V 10V ±30V
FQI5N30TU
RFQ
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RFQ
1,718
In-stock
ON Semiconductor MOSFET N-CH 300V 5.4A I2PAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 3.13W (Ta), 70W (Tc) N-Channel - 300V 5.4A (Tc) 900 mOhm @ 2.7A, 10V 5V @ 250µA 13nC @ 10V 430pF @ 25V 10V ±30V
TK5Q60W,S1VQ
RFQ
VIEW
RFQ
3,763
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 600V 5.4A IPAK DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak I-PAK 60W (Tc) N-Channel Super Junction 600V 5.4A (Ta) 900 mOhm @ 2.7A, 10V 3.7V @ 270µA 10.5nC @ 10V 380pF @ 300V 10V ±30V
TK5A60W,S4VX
RFQ
VIEW
RFQ
1,318
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 600V 5.4A TO-220SIS DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel Super Junction 600V 5.4A (Ta) 900 mOhm @ 2.7A, 10V 3.7V @ 270µA 10.5nC @ 10V 380pF @ 300V 10V ±30V