Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PHX8NQ11T,127
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RFQ
3,192
In-stock
NXP USA Inc. MOSFET N-CH 110V 7.5A SOT186A TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 27.7W (Tc) N-Channel 110V 7.5A (Tc) 180 mOhm @ 6A, 10V 4V @ 1mA 14.7nC @ 10V 360pF @ 25V 10V ±20V
NTD2955G
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RFQ
3,559
In-stock
ON Semiconductor MOSFET P-CH 60V 12A DPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 55W (Tj) P-Channel 60V 12A (Ta) 180 mOhm @ 6A, 10V 4V @ 250µA 30nC @ 10V 750pF @ 25V 10V ±20V
NTD2955-1G
RFQ
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RFQ
3,014
In-stock
ON Semiconductor MOSFET P-CH 60V 12A IPAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 55W (Tj) P-Channel 60V 12A (Ta) 180 mOhm @ 6A, 10V 4V @ 250µA 30nC @ 10V 750pF @ 25V 10V ±20V