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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TSM4NB60CZ C0G	RFQ VIEW	PDF RFQ	3,099 In-stock	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 4A TO220		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220	50W (Tc)	N-Channel	600V	4A (Tc)	2.5 Ohm @ 2A, 10V	4.5V @ 250µA	14.5nC @ 10V	500pF @ 25V	10V	±30V
	TSM4N60ECH C5G	RFQ VIEW	PDF RFQ	2,101 In-stock	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 4A TO251		-	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251 (IPAK)	86.2W (Tc)	N-Channel	600V	4A (Tc)	2.5 Ohm @ 2A, 10V	5V @ 250µA	12nC @ 10V	545pF @ 25V	10V	±30V
	DMG4N60SJ3	RFQ VIEW	PDF RFQ	3,492 In-stock	Diodes Incorporated	MOSFET NCH 600V 3A TO251		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251	41W (Tc)	N-Channel	600V	3A (Tc)	2.5 Ohm @ 2A, 10V	4.5V @ 250µA	14.3nC @ 10V	532pF @ 25V	10V	±30V
	TSM4NB60CH X0G	RFQ VIEW	PDF RFQ	3,652 In-stock	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 4A TO251		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Stub Leads, IPak	TO-251 (IPAK)	50W (Tc)	N-Channel	600V	4A (Tc)	2.5 Ohm @ 2A, 10V	4.5V @ 250µA	14.5nC @ 10V	500pF @ 25V	10V	±30V
	TSM4NB60CI C0G	RFQ VIEW	PDF RFQ	1,148 In-stock	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 4A ITO220		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220	50W (Tc)	N-Channel	600V	4A (Tc)	2.5 Ohm @ 2A, 10V	4.5V @ 250µA	14.5nC @ 10V	500pF @ 25V	10V	±30V
	IXFY4N85X	RFQ VIEW	PDF RFQ	939 In-stock	IXYS	MOSFET N-CH 850V 3.5A TO252		HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252 (IXFY)	150W (Tc)	N-Channel	850V	3.5A (Tc)	2.5 Ohm @ 2A, 10V	5.5V @ 250µA	7nC @ 10V	247pF @ 25V	10V	±30V
	IXFA4N85X	RFQ VIEW	PDF RFQ	1,617 In-stock	IXYS	MOSFET N-CH 850V 3.5A TO263		HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263 (IXFA)	150W (Tc)	N-Channel	850V	3.5A (Tc)	2.5 Ohm @ 2A, 10V	5.5V @ 250µA	7nC @ 10V	247pF @ 25V	10V	±30V
	IXFP4N85X	RFQ VIEW	PDF RFQ	1,059 In-stock	IXYS	MOSFET N-CH 850V 3.5A TO220AB		HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB (IXFP)	150W (Tc)	N-Channel	850V	3.5A (Tc)	2.5 Ohm @ 2A, 10V	5.5V @ 250µA	7nC @ 10V	247pF @ 25V	10V	±30V
	IXFP4N85XM	RFQ VIEW	PDF RFQ	2,855 In-stock	IXYS	MOSFET N-CH 850V 3.5A TO220		HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220	35W (Tc)	N-Channel	850V	3.5A (Tc)	2.5 Ohm @ 2A, 10V	5.5V @ 250µA	7nC @ 10V	247pF @ 25V	10V	±30V
	DMG4N60SCT	RFQ VIEW	PDF RFQ	629 In-stock	Diodes Incorporated	MOSFET NCH 600V 4.5A TO220		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	113W (Ta)	N-Channel	600V	4.5A (Ta)	2.5 Ohm @ 2A, 10V	4.5V @ 250µA	14.3nC @ 10V	532pF @ 25V	10V	±30V
	GP2M004A060PG	RFQ VIEW	PDF RFQ	3,366 In-stock	Global Power Technologies Group	MOSFET N-CH 600V 4A IPAK		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-PAK	86.2W (Tc)	N-Channel	600V	4A (Tc)	2.5 Ohm @ 2A, 10V	5V @ 250µA	12nC @ 10V	545pF @ 25V	10V	±30V

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