- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,725
In-stock
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Microsemi Corporation | MOSFET N-CH 600V 65A TO-264MAX | POWER MOS V® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | 264 MAX™ [L2] | 833W (Tc) | N-Channel | - | 600V | 65A (Tc) | 80 mOhm @ 32.5A, 10V | 4V @ 5mA | 590nC @ 10V | 13300pF @ 25V | 10V | ±30V | |||
|
VIEW |
979
In-stock
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STMicroelectronics | MOSFET N-CH 100V 65A TO-220FP | DeepGATE™, STripFET™ VII | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 35W (Tc) | N-Channel | - | 100V | 65A (Tc) | 4.2 mOhm @ 55A, 10V | 4.5V @ 250µA | 117nC @ 10V | 8115pF @ 50V | 10V | ±20V | |||
|
VIEW |
1,370
In-stock
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ON Semiconductor | MOSFET N-CH 200V 65A TO-3P | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 310W (Tc) | N-Channel | - | 200V | 65A (Tc) | 32 mOhm @ 32.5A, 10V | 5V @ 250µA | 200nC @ 10V | 7900pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,830
In-stock
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Infineon Technologies | MOSFET N-CH 200V 65A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 330W (Tc) | N-Channel | - | 200V | 65A (Tc) | 24 mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | 4600pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,883
In-stock
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STMicroelectronics | MOSFET N-CH 100V 65A TO-247 | DeepGATE™, STripFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 150W (Tc) | N-Channel | - | 100V | 65A (Tc) | 19.5 mOhm @ 30A, 10V | 4V @ 250µA | 85nC @ 10V | 5800pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,072
In-stock
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STMicroelectronics | MOSFET N-CH 100V 65A TO-220 | DeepGATE™, STripFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 150W (Tc) | N-Channel | - | 100V | 65A (Tc) | 19.5 mOhm @ 30A, 10V | 4V @ 250µA | 85nC @ 10V | 5800pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,476
In-stock
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STMicroelectronics | MOSFET N-CH 600V 65A TO-247 | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 450W (Tc) | N-Channel | - | 600V | 65A (Tc) | 49 mOhm @ 32.5A, 10V | 4V @ 250µA | 174nC @ 10V | 5800pF @ 100V | 10V | ±25V | |||
|
VIEW |
2,322
In-stock
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IXYS | 850V/65A ULTRA JUNCTION X-CLASS | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 830W (Tc) | N-Channel | - | 850V | 65A (Tc) | 65 mOhm @ 33A, 10V | 5.5V @ 8mA | 230nC @ 10V | 8900pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,010
In-stock
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ON Semiconductor | MOSFET N-CH 650V 65A TO247-3 | SuperFET® III | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C | Through Hole | TO-247-3 | TO-247-3 | 417W (Tc) | N-Channel | - | 650V | 65A (Tc) | 40 mOhm @ 32.5A, 10V | 4.5V @ 6.5mA | 136nC @ 10V | 4740pF @ 400V | 10V | ±30V | |||
|
VIEW |
785
In-stock
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ON Semiconductor | MOSFET N-CH 60V 65A TO-220 | UniFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 135W (Tc) | N-Channel | - | 60V | 65A (Tc) | 16 mOhm @ 32.5A, 10V | 4V @ 250µA | 43nC @ 10V | 2170pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,523
In-stock
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Infineon Technologies | MOSFET N-CH 200V 65A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 330W (Tc) | N-Channel | - | 200V | 65A (Tc) | 25 mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | 4600pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,454
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 65A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 100V | 65A (Tc) | 4.8 mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | 5400pF @ 50V | 10V | ±20V | |||
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|
VIEW |
1,646
In-stock
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ON Semiconductor | MOSFET N-CH 60V 65A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | - | 60V | 65A (Tc) | 16 mOhm @ 32.5A, 10V | 4V @ 250µA | 65nC @ 10V | 2410pF @ 25V | 10V | ±25V | |||
