- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
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- FET Type :
- Rds On (Max) @ Id, Vgs :
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20 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,840
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 450V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 450V | 12A (Ta) | 520 mOhm @ 6A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | |||
|
VIEW |
927
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | 600V | 12A (Ta) | 400 mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | 10V | ±30V | |||
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VIEW |
1,657
In-stock
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Renesas Electronics America | MOSFET N-CH 500V 12A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FL | 30W (Tc) | N-Channel | 500V | 12A (Ta) | 700 mOhm @ 6A, 10V | - | 27.8nC @ 10V | 1050pF @ 25V | 10V | ±30V | |||
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VIEW |
2,170
In-stock
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Renesas Electronics America | MOSFET N-CH 500V 12A LDPAK | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-83 | 4-LDPAK | 100W (Tc) | N-Channel | 500V | 12A (Ta) | 700 mOhm @ 6A, 10V | - | 27.8nC @ 10V | 1050pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,734
In-stock
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Renesas Electronics America | MOSFET N-CH 500V 12A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | 500V | 12A (Ta) | 620 mOhm @ 6A, 10V | - | 29nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,036
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 550V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 550V | 12A (Ta) | 570 mOhm @ 6A, 10V | 4V @ 1mA | 28nC @ 10V | 1550pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,985
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 525V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 525V | 12A (Ta) | 580 mOhm @ 6A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,648
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 500V | 12A (Ta) | 520 mOhm @ 6A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,520
In-stock
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ON Semiconductor | MOSFET N-CH 60V 12A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.5W (Ta), 48W (Tj) | N-Channel | 60V | 12A (Ta) | 94 mOhm @ 6A, 10V | 4V @ 250µA | 20nC @ 10V | 450pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,477
In-stock
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ON Semiconductor | MOSFET N-CH 60V 12A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 1.5W (Ta), 48W (Tj) | N-Channel | 60V | 12A (Ta) | 94 mOhm @ 6A, 10V | 4V @ 250µA | 20nC @ 10V | 450pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,155
In-stock
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ON Semiconductor | MOSFET N-CH 60V 12A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 1.5W (Ta), 48W (Tj) | N-Channel | 60V | 12A (Ta) | 94 mOhm @ 6A, 10V | 4V @ 250µA | 20nC @ 10V | 450pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,167
In-stock
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ON Semiconductor | MOSFET N-CH 60V 12A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.5W (Ta), 48W (Tj) | N-Channel | 60V | 12A (Ta) | 94 mOhm @ 6A, 10V | 4V @ 250µA | 20nC @ 10V | 450pF @ 25V | 10V | ±20V | |||
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VIEW |
3,559
In-stock
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ON Semiconductor | MOSFET P-CH 60V 12A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 55W (Tj) | P-Channel | 60V | 12A (Ta) | 180 mOhm @ 6A, 10V | 4V @ 250µA | 30nC @ 10V | 750pF @ 25V | 10V | ±20V | |||
|
VIEW |
670
In-stock
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ON Semiconductor | MOSFET N-CH 100V 12A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.28W (Ta), 56.6W (Tc) | N-Channel | 100V | 12A (Ta) | 165 mOhm @ 6A, 10V | 4V @ 250µA | 20nC @ 10V | 550pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,895
In-stock
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ON Semiconductor | MOSFET N-CH 100V 12A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 1.28W (Ta), 56.6W (Tc) | N-Channel | 100V | 12A (Ta) | 165 mOhm @ 6A, 10V | 4V @ 250µA | 20nC @ 10V | 550pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,606
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V TO220SIS | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 500V | 12A (Ta) | 520 mOhm @ 6A, 10V | 4V @ 1.2mA | 40nC @ 10V | 1300pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,396
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 600V | 12A (Ta) | 550 mOhm @ 6A, 10V | 4V @ 1mA | 38nC @ 10V | 1800pF @ 25V | 10V | ±30V | |||
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VIEW |
2,336
In-stock
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Infineon Technologies | MOSFET N-CH 60V 12A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 60V | 12A (Ta) | 9.4 mOhm @ 12A, 10V | 4.9V @ 100µA | 39nC @ 10V | 1560pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,014
In-stock
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ON Semiconductor | MOSFET P-CH 60V 12A IPAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 55W (Tj) | P-Channel | 60V | 12A (Ta) | 180 mOhm @ 6A, 10V | 4V @ 250µA | 30nC @ 10V | 750pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,682
In-stock
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Central Semiconductor Corp | MOSFET N-CH 800V 12A | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 40W (Tc) | N-Channel | 800V | 12A (Ta) | 450 mOhm @ 6A, 10V | 4V @ 250µA | 52.4nC @ 10V | 1090pF @ 100V | 10V | 30V |