- Manufacture :
- Series :
- Part Status :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
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12 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
3,660
In-stock
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Infineon Technologies | MOSFET N-CH 900V 5.1A TO-262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | 900V | 5.1A (Tc) | 1.2 Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | 710pF @ 100V | 10V | ±20V | |||
|
VIEW |
1,972
In-stock
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Infineon Technologies | MOSFET P-CH 60V 5.1A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 25W (Tc) | P-Channel | 60V | 5.1A (Tc) | 500 mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,050
In-stock
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Infineon Technologies | MOSFET N-CH 900V 5.1A 10-220FP | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 31W (Tc) | N-Channel | 900V | 5.1A (Tc) | 1.2 Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | 710pF @ 100V | 10V | ±20V | |||
|
VIEW |
3,777
In-stock
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Infineon Technologies | MOSFET N-CH 900V 5.1A TO-247 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 83W (Tc) | N-Channel | 900V | 5.1A (Tc) | 1.2 Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | 710pF @ 100V | 10V | ±20V | |||
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|
VIEW |
941
In-stock
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Infineon Technologies | MOSFET P-CH 60V 5.1A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 2.5W (Ta), 25W (Tc) | P-Channel | 60V | 5.1A (Tc) | 500 mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,644
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 5.1A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 25W (Tc) | P-Channel | 60V | 5.1A (Tc) | 500 mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
,%20SC-63.jpg)
|
VIEW |
2,229
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 5.1A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 25W (Tc) | P-Channel | 60V | 5.1A (Tc) | 500 mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,892
In-stock
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Vishay Siliconix | MOSFET N-CH 650V 5.1A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 60W (Tc) | N-Channel | 650V | 5.1A (Tc) | 930 mOhm @ 3.1A, 10V | 4V @ 250µA | 48nC @ 10V | 1417pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,292
In-stock
|
Infineon Technologies | MOSFET N-CH 900V 5.1A TO-220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 83W (Tc) | N-Channel | 900V | 5.1A (Tc) | 1.2 Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | 710pF @ 100V | 10V | ±20V | |||
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|
VIEW |
2,573
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 5.1A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 25W (Tc) | P-Channel | 60V | 5.1A (Tc) | 500 mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,460
In-stock
|
Vishay Siliconix | MOSFET N-CH 650V 5.1A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 60W (Tc) | N-Channel | 650V | 5.1A (Tc) | 930 mOhm @ 3.1A, 10V | 4V @ 250µA | 48nC @ 10V | 1417pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,342
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 5.1A DPAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 25W (Tc) | P-Channel | 60V | 5.1A (Tc) | 500 mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
