- Part Status :
- Operating Temperature :
- Mounting Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.3 Ohm @ 3A, 10V (2)
- 1.5 Ohm @ 3.1A, 10V (1)
- 13 mOhm @ 500mA, 10V (2)
- 14 mOhm @ 32A, 10V (1)
- 16 mOhm @ 35A, 10V (1)
- 19.5 mOhm @ 27.5A, 10V (2)
- 190 mOhm @ 7.9A, 10V (4)
- 190 mOhm @ 9A, 10V (4)
- 23 mOhm @ 25A, 10V (2)
- 230 mOhm @ 7.9A, 10V (1)
- 250 mOhm @ 6.9A, 10V (3)
- 260 mOhm @ 13A, 10V (2)
- 28 mOhm @ 22A, 10V (1)
- 290 Ohm @ 500mA, 10V (1)
- 3.6 Ohm @ 1.95A, 10V (1)
- 30 mOhm @ 22A, 10V (2)
- 300 mOhm @ 6.9A, 10V (3)
- 360 mOhm @ 11A, 10V (1)
- 4.25 Ohm @ 1.8A, 10V (1)
- 44 mOhm @ 16A, 10V (5)
- 445 mOhm @ 6A, 10V (1)
- 770 mOhm @ 7A, 10V (1)
- 800 mOhm @ 4A, 10V (2)
- 850 mOhm @ 4A, 10V (1)
- Gate Charge (Qg) (Max) @ Vgs :
-
- 100nC @ 10V (1)
- 16.3nC @ 10V (1)
- 175nC @ 10V (1)
- 18nC @ 10V (1)
- 21.5nC @ 10V (2)
- 22nC @ 10V (3)
- 25nC @ 10V (2)
- 26nC @ 10V (1)
- 33nC @ 10V (4)
- 34nC @ 10V (2)
- 35nC @ 10V (3)
- 36nC @ 10V (1)
- 37nC @ 10V (2)
- 38nC @ 10V (4)
- 40nC @ 10V (3)
- 43nC @ 10V (1)
- 45nC @ 10V (3)
- 58nC @ 10V (1)
- 61nC @ 10V (1)
- 65nC @ 10V (2)
- 71nC @ 10V (5)
- 81nC @ 10V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 1000pF @ 25V (1)
- 1262pF @ 25V (2)
- 1300pF @ 300V (6)
- 1345pF @ 100V (3)
- 1350pF @ 300V (5)
- 1400pF @ 25V (2)
- 1420pF @ 25V (2)
- 1434pF @ 100V (1)
- 1460pF @ 25V (2)
- 1930pF @ 25V (1)
- 1960pF @ 25V (5)
- 1970pF @ 25V (1)
- 3600pF @ 25V (2)
- 3900pF @ 25V (1)
- 4000pF @ 25V (1)
- 435pF @ 25V (1)
- 5400pF @ 25V (1)
- 545pF @ 100V (2)
- 620pF @ 100V (1)
- 630pF @ 100V (2)
- 735pF @ 25V (1)
- 880pF @ 25V (1)
- 910pF @ 25V (1)
- Applied Filters :
48 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,397
In-stock
|
IXYS | MOSFET N-CH 55V 64A TO-252 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 130W (Tc) | N-Channel | - | 55V | 64A (Tc) | 13 mOhm @ 500mA, 10V | 4V @ 25µA | 37nC @ 10V | 1420pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,823
In-stock
|
IXYS | MOSFET N-CH 75V 55A TO-252 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 130W (Tc) | N-Channel | - | 75V | 55A (Tc) | 19.5 mOhm @ 27.5A, 10V | 4V @ 25µA | 33nC @ 10V | 1400pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,700
In-stock
|
IXYS | MOSFET N-CH 85V 50A TO-252 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 130W (Tc) | N-Channel | - | 85V | 50A (Tc) | 23 mOhm @ 25A, 10V | 4V @ 25µA | 34nC @ 10V | 1460pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,163
In-stock
|
ON Semiconductor | MOSFET N-CH 600V 6.2A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 130W (Tc) | N-Channel | - | 600V | 6.2A (Tc) | 1.5 Ohm @ 3.1A, 10V | 5V @ 250µA | 25nC @ 10V | 1000pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,566
In-stock
|
ON Semiconductor | MOSFET N-CH 900V 3.6A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 130W (Tc) | N-Channel | - | 900V | 3.6A (Tc) | 4.25 Ohm @ 1.8A, 10V | 5V @ 250µA | 26nC @ 10V | 910pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,708
In-stock
|
IXYS | MOSFET N-CH 55V 64A TO-220 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 130W (Tc) | N-Channel | - | 55V | 64A (Tc) | 13 mOhm @ 500mA, 10V | 4V @ 25µA | 37nC @ 10V | 1420pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,113
In-stock
|
IXYS | MOSFET N-CH 75V 55A TO-220 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 130W (Tc) | N-Channel | - | 75V | 55A (Tc) | 19.5 mOhm @ 27.5A, 10V | 4V @ 25µA | 33nC @ 10V | 1400pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,999
In-stock
|
IXYS | MOSFET N-CH 85V 50A TO-220 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 130W (Tc) | N-Channel | - | 85V | 50A (Tc) | 23 mOhm @ 25A, 10V | 4V @ 25µA | 34nC @ 10V | 1460pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,693
In-stock
|
IXYS | MOSFET N-CH 800V 8A ISOPLUS220 | HiPerFET™, PolarHT™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ | 130W (Tc) | N-Channel | - | 800V | 8A (Tc) | 770 mOhm @ 7A, 10V | 5.5V @ 4mA | 61nC @ 10V | 3900pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,892
In-stock
|
ON Semiconductor | MOSFET N-CH 150V 44A TO-3PF | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | SC-94 | TO-3PF | 130W (Tc) | N-Channel | - | 150V | 44A (Tc) | 28 mOhm @ 22A, 10V | 4V @ 250µA | 175nC @ 10V | 5400pF @ 25V | 10V | ±25V | |||
|
|
VIEW |
1,137
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 64A TO-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 60V | 64A (Tc) | 16 mOhm @ 35A, 10V | 4V @ 250µA | 100nC @ 10V | 1930pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,583
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15.8A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 130W (Tc) | N-Channel | - | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
VIEW |
3,218
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 33A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 130W (Tc) | N-Channel | - | 100V | 33A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | |||
|
VIEW |
911
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15.8A TO-220AB | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 600V | 15.8A (Ta) | 230 mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,397
In-stock
|
ON Semiconductor | MOSFET N-CH 500V TO-220AB-3 | UniFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 130W (Tc) | N-Channel | - | 500V | 8A (Tc) | 850 mOhm @ 4A, 10V | 5V @ 250µA | 18nC @ 10V | 735pF @ 25V | 10V | ±25V | |||
|
|
VIEW |
2,294
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 32A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 130W (Tc) | N-Channel | - | 100V | 32A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,838
In-stock
|
IXYS | MOSFET N-CH 4000V .3A PLUS 220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PLUS-220SMD | PLUS-220SMD | 130W (Tc) | N-Channel | - | 4000V | 300mA (Tc) | 290 Ohm @ 500mA, 10V | 4V @ 250µA | 16.3nC @ 10V | 435pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,850
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 18A I2PAK | MDmesh™ V | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 130W (Tc) | N-Channel | - | 650V | 18A (Tc) | 190 mOhm @ 9A, 10V | 5V @ 250µA | 36nC @ 10V | 1434pF @ 100V | 10V | ±25V | |||
|
VIEW |
1,069
In-stock
|
STMicroelectronics | MOSFET N-CHANNEL 800V 12A TO220 | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 800V | 12A (Tc) | 445 mOhm @ 6A, 10V | 5V @ 100µA | 22nC @ 10V | 620pF @ 100V | 10V | ±30V | |||
|
|
VIEW |
906
In-stock
|
IXYS | MOSFET N-CH 600V 12A ISOPLUS220 | HiPerFET™, PolarHT™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ | 130W (Tc) | N-Channel | - | 600V | 12A (Tc) | 360 mOhm @ 11A, 10V | 5V @ 4mA | 58nC @ 10V | 4000pF @ 25V | 10V | ±30V | |||
|
VIEW |
790
In-stock
|
IXYS | MOSFET N-CH 500V 15A ISOPLUS220 | HiPerFET™, PolarHT™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ | 130W (Tc) | N-Channel | - | 500V | 15A (Tc) | 260 mOhm @ 13A, 10V | 5.5V @ 4mA | 65nC @ 10V | 3600pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
1,292
In-stock
|
IXYS | MOSFET N-CH 500V 15A ISOPLUS220 | PolarHV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ | 130W (Tc) | N-Channel | - | 500V | 15A (Tc) | 260 mOhm @ 13A, 10V | 5.5V @ 250µA | 65nC @ 10V | 3600pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
800
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
|
VIEW |
3,976
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 33A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 100V | 33A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,355
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO-3P(N) | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 130W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,287
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 130W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,694
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
VIEW |
3,899
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,970
In-stock
|
STMicroelectronics | N-CHANNEL 900 V, 0.60 OHM TYP., | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 130W (Tc) | N-Channel | - | 900V | 8A (Tc) | - | 5V @ 100µA | - | - | 10V | ±30V | |||
|
VIEW |
3,911
In-stock
|
STMicroelectronics | N-CHANNEL 900 V, 0.60 OHM TYP., | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 130W (Tc) | N-Channel | - | 900V | 8A (Tc) | - | 5V @ 100µA | - | - | 10V | ±30V | |||
