- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
818
In-stock
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NXP USA Inc. | MOSFET N-CH 110V 30.4A SOT186A | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 62.5W (Tc) | N-Channel | 110V | 30.4A (Tc) | 25 mOhm @ 25A, 10V | 4V @ 1mA | 61nC @ 10V | 2600pF @ 25V | 10V | ±20V | |||
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VIEW |
3,396
In-stock
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Infineon Technologies | MOSFET N-CH 700V 6A TO247 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 62.5W (Tc) | N-Channel | 700V | 6A (Tc) | 660 mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22nC @ 10V | 615pF @ 100V | 10V | ±20V | |||
|
VIEW |
3,715
In-stock
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Infineon Technologies | MOSFET N-CH 650V 6A TO220 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 62.5W (Tc) | N-Channel | 650V | 6A (Tc) | 660 mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22nC @ 10V | 615pF @ 100V | 10V | ±20V | |||
|
VIEW |
1,637
In-stock
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Infineon Technologies | MOSFET N-CH 650V 6A TO262 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 62.5W (Tc) | N-Channel | 650V | 6A (Tc) | 660 mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22nC @ 10V | 615pF @ 100V | 10V | ±20V | |||
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VIEW |
1,515
In-stock
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Infineon Technologies | MOSFET N-CH 650V TO-220-3 | Automotive, AEC-Q101, CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 62.5W (Tc) | N-Channel | 650V | 6A (Tc) | 660 mOhm @ 3.2A, 10V | 4.5V @ 200µA | 20nC @ 10V | 543pF @ 100V | 10V | ±20V | |||
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VIEW |
3,868
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 600V 11A ITO220S | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ITO-220S | 62.5W (Tc) | N-Channel | 600V | 11A (Tc) | 380 mOhm @ 2.7A, 10V | 4V @ 250µA | 21nC @ 10V | 810pF @ 100V | 10V | ±30V | |||
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VIEW |
810
In-stock
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ON Semiconductor | MOSFET N-CH 250V 25A TO-220F | PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 62.5W (Tc) | N-Channel | 250V | 25A (Tc) | 42.5 mOhm @ 25A, 10V | 5V @ 250µA | 101nC @ 10V | 7280pF @ 25V | 10V | ±30V | |||
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|
VIEW |
2,019
In-stock
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ON Semiconductor | MOSFET N-CH 600V TO-220F-3 | UniFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 62.5W (Tc) | N-Channel | 600V | 17A (Tc) | 340 mOhm @ 8.5A, 10V | 5V @ 250µA | 65nC @ 10V | 3040pF @ 25V | 10V | ±30V | |||
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VIEW |
2,510
In-stock
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Vishay Siliconix | MOSFET N-CH 800V 2.8A IPAK | E | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | IPAK (TO-251) | 62.5W (Tc) | N-Channel | 800V | 2.8A (Tc) | 2.75 Ohm @ 1A, 10V | 4V @ 250µA | 19.6nC @ 10V | 315pF @ 100V | 10V | ±30V | |||
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VIEW |
1,721
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 700V 6A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 62.5W (Tc) | N-Channel | 700V | 6A (Tc) | 750 mOhm @ 1.8A, 10V | 4V @ 250µA | 10.7nC @ 10V | 555pF @ 100V | 10V | ±30V | |||
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VIEW |
3,091
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 6A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 62.5W (Tc) | N-Channel | 600V | 6A (Tc) | 750 mOhm @ 3A, 10V | 4V @ 250µA | 10.8nC @ 10V | 554pF @ 100V | 10V | ±30V | |||
