- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
12 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,894
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 33A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 144W (Tc) | N-Channel | - | 150V | 33A (Tc) | 42 mOhm @ 21A, 10V | 5V @ 100µA | 40nC @ 10V | 1750pF @ 50V | 10V | ±20V | |||
;;3.jpg)
|
VIEW |
3,954
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 24A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 144W (Tc) | N-Channel | - | 200V | 24A (Tc) | 78 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
1,692
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 24A TO262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 144W (Tc) | N-Channel | - | 200V | 24A (Tc) | 77.5 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
2,458
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 24A TO262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 144W (Tc) | N-Channel | - | 200V | 24A (Tc) | 77.5 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
2,657
In-stock
|
Infineon Technologies | MOSFET N-CH 250V 14A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 144W (Tc) | N-Channel | - | 250V | 14A (Tc) | 260 mOhm @ 8.4A, 10V | 5V @ 250µA | 35nC @ 10V | 810pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
733
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 33A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 144W (Tc) | N-Channel | - | 150V | 33A (Tc) | 42 mOhm @ 21A, 10V | 5V @ 100µA | 40nC @ 10V | 1750pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
2,921
In-stock
|
Infineon Technologies | MOSFET N-CH 250V 14A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 144W (Tc) | N-Channel | - | 250V | 14A (Tc) | 260 mOhm @ 8.4A, 10V | 5V @ 250µA | 35nC @ 10V | 810pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,830
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 35A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 144W (Tc) | N-Channel | - | 150V | 35A (Tc) | 39 mOhm @ 21A, 10V | 5V @ 100µA | 40nC @ 10V | 1750pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
749
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 33A IPAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 144W (Tc) | N-Channel | - | 150V | 33A (Tc) | 42 mOhm @ 21A, 10V | 5V @ 100µA | 26nC @ 10V | 1750pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
2,806
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 25A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 144W (Tc) | N-Channel | - | 200V | 25A (Tc) | 72.5 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
2,987
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 25A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 144W (Tc) | N-Channel | - | 200V | 25A (Tc) | 72.5 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
2,036
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 35A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 144W (Tc) | N-Channel | - | 150V | 35A (Tc) | 39 mOhm @ 21A, 10V | 5V @ 100µA | 26nC @ 10V | 1750pF @ 50V | 10V | ±20V | |||
