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- Power Dissipation (Max) :
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14 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,281
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 6.2A D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 125W (Tc) | N-Channel | - | 600V | 6.2A (Tc) | 1.2 Ohm @ 3.7A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
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VIEW |
3,974
In-stock
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Vishay Siliconix | MOSFET N-CH 400V 10A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | - | N-Channel | - | 400V | 10A (Tc) | 550 mOhm @ 6A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
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VIEW |
3,772
In-stock
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IXYS | MOSFET N-CH 1000V 4A TO-268 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 150W (Tc) | N-Channel | - | 1000V | 4A (Tc) | 3 Ohm @ 2A, 10V | 5V @ 1.5mA | 39nC @ 10V | 1050pF @ 25V | 10V | ±20V | |||
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VIEW |
1,420
In-stock
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IXYS | MOSFET P-CH 100V 18A TO-263 | TrenchP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 83W (Tc) | P-Channel | - | 100V | 18A (Tc) | 120 mOhm @ 9A, 10V | 4.5V @ 250µA | 39nC @ 10V | 2100pF @ 25V | 10V | ±15V | |||
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VIEW |
1,369
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 8A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 125W (Tc) | N-Channel | - | 500V | 8A (Tc) | 850 mOhm @ 4.8A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
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VIEW |
1,467
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 8A D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 125W (Tc) | N-Channel | - | 500V | 8A (Tc) | 850 mOhm @ 4.8A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
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VIEW |
1,856
In-stock
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Infineon Technologies | MOSFET N-CH 100V 8.3A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 8.3A (Ta) | 18 mOhm @ 8.3A, 10V | 4.9V @ 100µA | 39nC @ 10V | 1640pF @ 25V | 10V | ±20V | |||
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VIEW |
3,607
In-stock
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Infineon Technologies | MOSFET N-CH 200V 2.5A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 2.5A (Ta) | 170 mOhm @ 1.5A, 10V | 5.5V @ 250µA | 39nC @ 10V | 940pF @ 25V | 10V | ±30V | |||
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|
VIEW |
1,773
In-stock
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IXYS | MOSFET N-CH 1000V 3A TO-263 | PolarVHV™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 125W (Tc) | N-Channel | - | 1000V | 3A (Tc) | 4.8 Ohm @ 1.5A, 10V | 4.5V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,843
In-stock
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IXYS | MOSFET P-CH 100V 18A TO-252 | TrenchP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 83W (Tc) | P-Channel | - | 100V | 18A (Tc) | 120 mOhm @ 9A, 10V | 4.5V @ 250µA | 39nC @ 10V | 2100pF @ 25V | 10V | ±15V | |||
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VIEW |
2,543
In-stock
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Infineon Technologies | MOSFET N-CH 200V 2.5A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 2.5A (Ta) | 170 mOhm @ 1.5A, 10V | 5.5V @ 250µA | 39nC @ 10V | 940pF @ 25V | 10V | ±30V | |||
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VIEW |
2,336
In-stock
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Infineon Technologies | MOSFET N-CH 60V 12A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 60V | 12A (Ta) | 9.4 mOhm @ 12A, 10V | 4.9V @ 100µA | 39nC @ 10V | 1560pF @ 25V | 10V | ±20V | |||
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VIEW |
1,833
In-stock
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IXYS | MOSFET N-CH 1000V 4A TO-263 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXFA) | 150W (Tc) | N-Channel | - | 1000V | 4A (Tc) | 3 Ohm @ 2A, 10V | 4.5V @ 1.5mA | 39nC @ 10V | 1050pF @ 25V | 10V | ±20V | |||
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VIEW |
3,625
In-stock
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IXYS | MOSFET N-CH 1200V 3A TO-263 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXFA) | 200W (Tc) | N-Channel | - | 1200V | 3A (Tc) | 4.5 Ohm @ 1.5A, 10V | 5V @ 1.5mA | 39nC @ 10V | 1050pF @ 25V | 10V | ±20V | |||
