Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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3,173
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Infineon Technologies MOSFET N-CH 40V 80A HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 40.5W (Tc) N-Channel - 40V 80A (Tc) 3.3 mOhm @ 48A, 10V 3.9V @ 100µA 90nC @ 10V 3199pF @ 25V 10V ±20V
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2,945
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Infineon Technologies MOSFET N-CH 40V 95A HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 42W (Tc) N-Channel - 40V 95A (Tc) 2.5 mOhm @ 57A, 10V 3.9V @ 100µA 132nC @ 10V 4549pF @ 25V 10V ±20V
IRF200B211
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3,428
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Infineon Technologies MOSFET N-CH 200V 12A TO-220AB HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 80W (Tc) N-Channel - 200V 12A (Tc) 170 mOhm @ 7.2A, 10V 4.9V @ 50µA 23nC @ 10V 790pF @ 50V 10V ±20V
IRF100B202
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1,233
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Infineon Technologies MOSFET N-CH 100V 97A TO-220AB HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 221W (Tc) N-Channel - 100V 97A (Tc) 8.6 mOhm @ 58A, 10V 4V @ 150µA 116nC @ 10V 4476pF @ 50V 10V ±20V
IRF100B201
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3,065
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Infineon Technologies MOSFET N-CH 100V 192A TO-220AB HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 441W (Tc) N-Channel - 100V 192A (Tc) 4.2 mOhm @ 115A, 10V 4V @ 250µA 255nC @ 10V 9500pF @ 50V 10V ±20V