- Supplier Device Package :
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- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,415
In-stock
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Infineon Technologies | MOSFET P-CH 60V 30A IPAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 125W (Tc) | P-Channel | - | 60V | 30A (Tc) | 75 mOhm @ 21.5A, 10V | 4V @ 1.7mA | 48nC @ 10V | 1535pF @ 25V | 10V | ±20V | |||
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VIEW |
1,194
In-stock
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Infineon Technologies | MOSFET P-CH 60V 18.6A TO-251 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | - | P-Channel | - | 60V | 18.6A (Tc) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 33nC @ 10V | 860pF @ 25V | 10V | ±20V | |||
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VIEW |
2,031
In-stock
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Infineon Technologies | MOSFET N-CH 100V 10.5A IPAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | P-TO251-3 | 50W (Tc) | N-Channel | - | 100V | 10.5A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | |||
