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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK650A60F,S4X	RFQ VIEW	PDF RFQ	2,278 In-stock	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR TO-		U-MOSIX	Active	Tube	MOSFET (Metal Oxide)	150°C	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	600V	11A (Ta)	650 mOhm @ 5.5A, 10V	4V @ 1.16mA	34nC @ 10V	1320pF @ 300V	10V	±30V
	TK750A60F,S4X	RFQ VIEW	PDF RFQ	1,243 In-stock	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR TO-		U-MOSIX	Active	Tube	MOSFET (Metal Oxide)	150°C	Through Hole	TO-220-3 Full Pack	TO-220SIS	40W (Tc)	N-Channel	-	600V	10A (Ta)	750 mOhm @ 5A, 10V	4V @ 1mA	30nC @ 10V	1130pF @ 300V	10V	±30V
	TK1K2A60F,S4X	RFQ VIEW	PDF RFQ	1,337 In-stock	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR TO-		U-MOSIX	Active	Tube	MOSFET (Metal Oxide)	150°C	Through Hole	TO-220-3 Full Pack	TO-220SIS	35W (Tc)	N-Channel	-	600V	6A (Ta)	1.2 Ohm @ 3A, 10V	4V @ 630µA	21nC @ 10V	740pF @ 300V	10V	±30V
	TK1K9A60F,S4X	RFQ VIEW	PDF RFQ	1,319 In-stock	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR TO-		U-MOSIX	Active	Tube	MOSFET (Metal Oxide)	150°C	Through Hole	TO-220-3 Full Pack	TO-220SIS	30W (Tc)	N-Channel	-	600V	3.7A (Ta)	1.9 Ohm @ 1.9A, 10V	4V @ 400µA	14nC @ 10V	490pF @ 300V	10V	±30V
	TK7E80W,S1X	RFQ VIEW	PDF RFQ	759 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 800V 6.5A TO220		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C	Through Hole	TO-220-3	TO-220	110W (Tc)	N-Channel	-	800V	6.5A (Ta)	950 mOhm @ 3.3A, 10V	4V @ 280µA	13nC @ 10V	700pF @ 300V	10V	±20V
	TK17E80W,S1X	RFQ VIEW	PDF RFQ	2,174 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CHANNEL 800V 17A TO220		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C	Through Hole	TO-220-3	TO-220	180W (Tc)	N-Channel	-	800V	17A (Ta)	290 mOhm @ 8.5A, 10V	4V @ 850µA	32nC @ 10V	2050pF @ 300V	10V	±20V
	TK17A80W,S4X	RFQ VIEW	PDF RFQ	2,168 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 800V 17A TO220SIS		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	800V	17A (Ta)	290 mOhm @ 8.5A, 10V	4V @ 850µA	32nC @ 10V	2050pF @ 300V	10V	±20V
	TK12E80W,S1X	RFQ VIEW	PDF RFQ	897 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 800V 11.5A TO220		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C	Through Hole	TO-220-3	TO-220	165W (Tc)	N-Channel	-	800V	11.5A (Ta)	450 mOhm @ 5.8A, 10V	4V @ 570µA	23nC @ 10V	1400pF @ 300V	10V	±20V
	TK12A80W,S4X	RFQ VIEW	PDF RFQ	3,820 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 800V 11.5A TO220SIS		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	800V	11.5A (Ta)	450 mOhm @ 5.8A, 10V	4V @ 570µA	23nC @ 10V	1400pF @ 300V	10V	±20V
	TK10A80W,S4X	RFQ VIEW	PDF RFQ	2,138 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 800V 9.5A TO220SIS		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C	Through Hole	TO-220-3 Full Pack	TO-220SIS	40W (Tc)	N-Channel	-	800V	9.5A (Ta)	550 mOhm @ 4.8A, 10V	4V @ 450µA	19nC @ 10V	1150pF @ 300V	10V	±20V

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