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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IXTP1R4N120P	RFQ VIEW	PDF RFQ	3,208 In-stock	IXYS	MOSFET N-CH 1200V 1.4A TO-220		Polar™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	86W (Tc)	N-Channel	1200V	1.4A (Tc)	13 Ohm @ 500mA, 10V	4.5V @ 100µA	24.8nC @ 10V	666pF @ 25V	10V	±20V
	IXTP2N100P	RFQ VIEW	PDF RFQ	3,655 In-stock	IXYS	MOSFET N-CH 1000V 2A TO-220		Polar™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	86W (Tc)	N-Channel	1000V	2A (Tc)	7.5 Ohm @ 500mA, 10V	4.5V @ 100µA	24.3nC @ 10V	655pF @ 25V	10V	±20V
	PSMN034-100PS,127	RFQ VIEW	PDF RFQ	1,757 In-stock	Nexperia USA Inc.	MOSFET N-CH 100V TO220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	86W (Tc)	N-Channel	100V	32A (Tc)	34.5 mOhm @ 15A, 10V	4V @ 1mA	23.8nC @ 10V	1201pF @ 50V	10V	±20V
	PSMN015-60PS,127	RFQ VIEW	PDF RFQ	1,396 In-stock	Nexperia USA Inc.	MOSFET N-CH 60V 50A TO220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	86W (Tc)	N-Channel	60V	50A (Tc)	14.8 mOhm @ 15A, 10V	4V @ 1mA	20.9nC @ 10V	1220pF @ 30V	10V	±20V
	PSMN8R0-40PS,127	RFQ VIEW	PDF RFQ	3,051 In-stock	Nexperia USA Inc.	MOSFET N-CH 40V 77A TO220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	86W (Tc)	N-Channel	40V	77A (Tc)	7.6 mOhm @ 25A, 10V	4V @ 1mA	21nC @ 10V	1262pF @ 12V	10V	±20V

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