Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF7820PBF
RFQ
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RFQ
1,580
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Infineon Technologies MOSFET N CH 200V 3.7A 8-SO HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 200V 3.7A (Ta) 78 mOhm @ 2.2A, 10V 5V @ 100µA 44nC @ 10V 1750pF @ 100V 10V ±20V
IPA60R190P6XKSA1
RFQ
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RFQ
925
In-stock
Infineon Technologies MOSFET N-CH 600V 9.5A TO220-FP CoolMOS™ P6 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO-220-FP 34W (Tc) N-Channel - 600V 20.2A (Tc) 190 mOhm @ 7.6A, 10V 4.5V @ 630µ 37nC @ 10V 1750pF @ 100V 10V ±20V
IPW60R190P6FKSA1
RFQ
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RFQ
2,615
In-stock
Infineon Technologies MOSFET N-CH 600V 20.2A TO247 CoolMOS™ P6 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 151W (Tc) N-Channel - 600V 20.2A (Tc) 190 mOhm @ 7.6A, 10V 4.5V @ 630µ 11nC @ 10V 1750pF @ 100V 10V ±20V
IPP60R190P6XKSA1
RFQ
VIEW
RFQ
2,949
In-stock
Infineon Technologies MOSFET N-CH 600V 20.2A TO220 CoolMOS™ P6 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 151W (Tc) N-Channel - 600V 20.2A (Tc) 190 mOhm @ 7.6A, 10V 4.5V @ 630µ 11nC @ 10V 1750pF @ 100V 10V ±20V