- Series :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
695
In-stock
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Microsemi Corporation | MOSFET N-CH 800V 13A TO-247 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 335W (Tc) | N-Channel | 800V | 13A (Tc) | 800 mOhm @ 6A, 10V | 5V @ 1mA | 80nC @ 10V | 2470pF @ 25V | 10V | ±30V | ||||
VIEW |
3,227
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 900V 9A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 89W (Tc) | N-Channel | 900V | 9A (Tc) | 1.4 Ohm @ 4.5A, 10V | 4V @ 250µA | 72nC @ 10V | 2470pF @ 25V | 10V | ±30V | ||||
VIEW |
1,242
In-stock
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Nexperia USA Inc. | MOSFET N-CH 200V 20A TO220AB | TrenchMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | 200V | 20A (Tc) | 130 mOhm @ 10A, 10V | 4V @ 1mA | 65nC @ 10V | 2470pF @ 25V | 10V | ±20V | ||||
VIEW |
1,953
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 900V 9A ITO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 89W (Tc) | N-Channel | 900V | 9A (Tc) | 1.4 Ohm @ 4.5A, 10V | 4V @ 250µA | 72nC @ 10V | 2470pF @ 25V | 10V | ±30V |