- Manufacture :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,181
In-stock
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Infineon Technologies | MOSFET P-CH TO220-3 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 125W (Tc) | P-Channel | - | 40V | 80A (Tc) | 4.7 mOhm @ 80A, 10V | 2.2V @ 250µA | 176nC @ 10V | 3800pF @ 25V | 4.5V, 10V | +5V, -16V | |||
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VIEW |
1,190
In-stock
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Infineon Technologies | MOSFET P-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 125W (Tc) | P-Channel | - | 40V | 80A (Tc) | 4.7 mOhm @ 80A, 10V | 2.2V @ 250µA | 176nC @ 10V | 3800pF @ 25V | 4.5V, 10V | +5V, -16V | |||
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VIEW |
1,649
In-stock
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Infineon Technologies | MOSFET N-CH 40V 120A TO220-3-1 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 188W (Tc) | N-Channel | - | 40V | 120A (Tc) | 1.9 mOhm @ 100A, 10V | 4V @ 140µA | 176nC @ 10V | 14000pF @ 25V | 10V | ±20V | |||
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VIEW |
951
In-stock
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Infineon Technologies | MOSFET N-CH 40V 120A TO262-3-1 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 188W (Tc) | N-Channel | - | 40V | 120A (Tc) | 1.9 mOhm @ 100A, 10V | 4V @ 140µA | 176nC @ 10V | 14000pF @ 25V | 10V | ±20V | |||
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VIEW |
1,680
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | 11570pF @ 25V | 10V | ±20V | |||
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VIEW |
3,867
In-stock
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STMicroelectronics | MOSFET N-CH 100V 180A TO220 | DeepGATE™, STripFET™ VII | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 300W (Tc) | N-Channel | - | 100V | 180A (Tc) | 3.2 mOhm @ 60A, 10V | 4.5V @ 250µA | 176nC @ 10V | 12600pF @ 25V | 10V | ±20V | |||
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VIEW |
3,519
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A TO220-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | 11570pF @ 25V | 10V | ±20V |