- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,236
In-stock
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NXP USA Inc. | MOSFET N-CH 75V 77A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | 158W (Tc) | N-Channel | - | 75V | 77A (Tc) | 10.4 mOhm @ 25A, 10V | 2.8V @ 1mA | 81nC @ 10V | 5251pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
709
In-stock
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Texas Instruments | MOSFET N-CH 60V 200A TO-220-3 | NexFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | 300W (Tc) | N-Channel | - | 60V | 200A (Ta) | 2 mOhm @ 100A, 10V | 2.4V @ 250µA | 81nC @ 10V | 6620pF @ 30V | 4.5V, 10V | ±20V |