Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
STP50NE10
RFQ
VIEW
RFQ
2,064
In-stock
STMicroelectronics MOSFET N-CH 100V 50A TO-220 STripFET™ Obsolete Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-220-3 TO-220AB 180W (Tc) N-Channel - 100V 50A (Tc) 27 mOhm @ 25A, 10V 4V @ 250µA 166nC @ 10V 6000pF @ 25V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
1,074
In-stock
IXYS MOSFET N-CH 800V 25A ISO264 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISO264™ ISO264™ 250W (Tc) N-Channel - 800V 25A (Tc) 150 mOhm @ 9A, 10V 4V @ 2mA 166nC @ 10V - 10V ±20V
FCH070N60E
RFQ
VIEW
RFQ
2,704
In-stock
ON Semiconductor MOSFET N-CH 600V 52A SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 Long Leads 481W (Tc) N-Channel - 600V 52A (Tc) 70 mOhm @ 26A, 10V 3.5V @ 250µA 166nC @ 10V 4925pF @ 380V 10V ±20V
IPP023N08N5AKSA1
RFQ
VIEW
RFQ
1,627
In-stock
Infineon Technologies MOSFET N-CH TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 300W (Tc) N-Channel - 80V 120A (Tc) 2.3 mOhm @ 100A, 10V 3.8V @ 208µA 166nC @ 10V 12100pF @ 40V 6V, 10V ±20V