- Operating Temperature :
- Mounting Type :
- Power Dissipation (Max) :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 11 mOhm @ 25A, 10V (3)
- 15 mOhm @ 49A, 10V (1)
- 16 mOhm @ 49A, 10V (1)
- 18 mOhm @ 80A, 10V (1)
- 180 mOhm @ 10A, 10V (1)
- 26 mOhm @ 7A, 10V (1)
- 4.1 mOhm @ 77A, 10V (1)
- 4.3 mOhm @ 25A, 10V (1)
- 5.7 mOhm @ 60A, 10V (1)
- 5.7 mOhm @ 80A, 10V (3)
- 520 mOhm @ 4.5A, 10V (2)
- 7 mOhm @ 28A, 10V (1)
- 7.5 mOhm @ 28A, 10V (1)
- 77 mOhm @ 17A, 10V (1)
- 8.4 mOhm @ 47A, 10V (8)
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
27 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,607
In-stock
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NXP USA Inc. | MOSFET N-CH 40V 75A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 254W (Tc) | N-Channel | - | 40V | 75A (Tc) | 4.3 mOhm @ 25A, 10V | 4V @ 1mA | 69nC @ 10V | 4824pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,585
In-stock
|
ON Semiconductor | MOSFET N-CH 500V 12A TO-220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 39W (Tc) | N-Channel | - | 500V | 12A (Tc) | 520 mOhm @ 4.5A, 10V | 4.5V @ 100µA | 69nC @ 10V | 1645pF @ 25V | 10V | ±30V | |||
|
VIEW |
653
In-stock
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Infineon Technologies | MOSFET N-CH 80V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | - | 80V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | 6V, 10V | ±20V | |||
|
VIEW |
749
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 56A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 110W (Tc) | N-Channel | - | 60V | 56A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | |||
|
VIEW |
1,154
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 79A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 110W (Tc) | N-Channel | - | 60V | 79A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | |||
|
VIEW |
2,227
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 79A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 60V | 56A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | |||
|
VIEW |
2,244
In-stock
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Infineon Technologies | MOSFET N-CH 60V 79A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 110W (Tc) | N-Channel | - | 60V | 79A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | |||
|
VIEW |
885
In-stock
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IXYS | MOSFET N-CH 85V 88A TO-220 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 230W (Tc) | N-Channel | - | 85V | 88A (Tc) | 11 mOhm @ 25A, 10V | 4V @ 100µA | 69nC @ 10V | 3140pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,233
In-stock
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IXYS | MOSFET N-CH 85V 88A TO-263-7 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | TO-263-7 (IXTA..7) | 230W (Tc) | N-Channel | - | 85V | 88A (Tc) | 11 mOhm @ 25A, 10V | 4V @ 100µA | 69nC @ 10V | 3140pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,394
In-stock
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IXYS | MOSFET N-CH 85V 88A TO-263 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 230W (Tc) | N-Channel | - | 85V | 88A (Tc) | 11 mOhm @ 25A, 10V | 4V @ 100µA | 69nC @ 10V | 3140pF @ 25V | 10V | ±20V | |||
|
VIEW |
680
In-stock
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Infineon Technologies | MOSFET N-CH 80V 80A TO220-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 150W (Tc) | N-Channel | - | 80V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | 6V, 10V | ±20V | |||
|
VIEW |
891
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 120V 56A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 168W (Tc) | N-Channel | - | 120V | 56A (Ta) | 7 mOhm @ 28A, 10V | 4V @ 1mA | 69nC @ 10V | 4200pF @ 60V | 10V | ±20V | |||
|
VIEW |
1,633
In-stock
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ON Semiconductor | MOSFET N-CH 500V 12A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 39W (Tc) | N-Channel | - | 500V | 12A (Tc) | 520 mOhm @ 4.5A, 10V | 4.5V @ 100µA | 69nC @ 10V | 1645pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,520
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 79A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 110W (Tc) | N-Channel | - | 60V | 79A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | - | - | |||
|
VIEW |
1,163
In-stock
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ON Semiconductor | MOSFET N-CH 100V 57A I2PAK | PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 110W (Tc) | N-Channel | - | 100V | 57A (Tc) | 16 mOhm @ 49A, 10V | 4.5V @ 250µA | 69nC @ 10V | 4760pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,301
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 28A TO-220-5 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 150W (Tc) | N-Channel | Current Sensing | 100V | 28A (Tc) | 77 mOhm @ 17A, 10V | 4V @ 250µA | 69nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,795
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 7A MICRO8 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 1.79W (Ta) | P-Channel | - | 30V | 7A (Ta) | 26 mOhm @ 7A, 10V | 2.5V @ 250µA | 69nC @ 10V | 2204pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,829
In-stock
|
Infineon Technologies | MOSFET N-CH 80V 60A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 39W (Tc) | N-Channel | - | 80V | 60A (Tc) | 5.7 mOhm @ 60A, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | 6V, 10V | ±20V | |||
|
VIEW |
3,753
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 79A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 110W (Tc) | N-Channel | - | 60V | 79A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | |||
|
VIEW |
1,665
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 79A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 110W (Tc) | N-Channel | - | 60V | 79A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | |||
|
VIEW |
1,933
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 80A TO-220AB | PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 255W (Tc) | N-Channel | - | 100V | 80A (Tc) | 18 mOhm @ 80A, 10V | 5.5V @ 250µA | 69nC @ 10V | 5522pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,027
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 19.5A TO-220 | FDmesh™ II | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | - | 600V | 19.5A (Tc) | 180 mOhm @ 10A, 10V | 5V @ 250µA | 69nC @ 10V | 2100pF @ 50V | 10V | ±25V | |||
|
VIEW |
2,002
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 120V 56A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 120V | 56A (Tc) | 7.5 mOhm @ 28A, 10V | 4V @ 1mA | 69nC @ 10V | 4200pF @ 60V | 10V | ±20V | |||
|
VIEW |
703
In-stock
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Infineon Technologies | MOSFET N-CH 80V 80A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 150W (Tc) | N-Channel | - | 80V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | 6V, 10V | ±20V | |||
|
VIEW |
3,419
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 77A TO-220F | PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 44.1W (Tc) | N-Channel | - | 60V | 77A (Tc) | 4.1 mOhm @ 77A, 10V | 4V @ 250µA | 69nC @ 10V | 5690pF @ 30V | 10V | ±20V | |||
|
VIEW |
2,750
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 57A TO-220 | PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 110W (Tc) | N-Channel | - | 100V | 57A (Tc) | 15 mOhm @ 49A, 10V | 4.5V @ 250µA | 69nC @ 10V | 4760pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,333
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 79A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 60V | 56A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V |