- Series :
- Operating Temperature :
- Mounting Type :
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19 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
1,787
In-stock
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ON Semiconductor | MOSFET P-CH 60V 27A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.75W (Ta), 120W (Tc) | P-Channel | - | 60V | 27A (Tc) | 70 mOhm @ 13.5A, 10V | 4V @ 250µA | 43nC @ 10V | 1400pF @ 25V | 10V | ±25V | ||||
VIEW |
2,647
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 51A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | ||||
VIEW |
1,829
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | ||||
VIEW |
2,660
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | ||||
VIEW |
2,231
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 9A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | N-Channel | - | 200V | 9A (Tc) | 400 mOhm @ 5.4A, 10V | 4V @ 250µA | 43nC @ 10V | 800pF @ 25V | 10V | ±20V | ||||
VIEW |
1,993
In-stock
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STMicroelectronics | MOSFET N-CH 400V 10A TO-220 | PowerMESH™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | N-Channel | - | 400V | 10A (Tc) | 550 mOhm @ 5.3A, 10V | 4V @ 250µA | 43nC @ 10V | 1400pF @ 25V | 10V | ±20V | ||||
VIEW |
2,180
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A TO220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | ||||
VIEW |
3,485
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | ||||
VIEW |
1,069
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | ||||
VIEW |
1,043
In-stock
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ON Semiconductor | MOSFET P-CH 60V 27A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 120W (Tc) | P-Channel | - | 60V | 27A (Tc) | 70 mOhm @ 13.5A, 10V | 4V @ 250µA | 43nC @ 10V | 1400pF @ 25V | 10V | ±25V | ||||
VIEW |
1,673
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 5.9A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 35W (Tc) | N-Channel | - | 200V | 5.9A (Tc) | 400 mOhm @ 3.5A, 10V | 4V @ 250µA | 43nC @ 10V | 800pF @ 25V | 10V | ±20V | ||||
VIEW |
3,864
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 9A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 3W (Ta), 74W (Tc) | N-Channel | - | 200V | 9A (Tc) | 400 mOhm @ 5.4A, 10V | 4V @ 250µA | 43nC @ 10V | 800pF @ 25V | 10V | ±20V | ||||
VIEW |
3,756
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 5.9A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 35W (Tc) | N-Channel | - | 200V | 5.9A (Tc) | 400 mOhm @ 3.5A, 10V | 4V @ 250µA | 43nC @ 10V | 800pF @ 25V | 10V | ±20V | ||||
VIEW |
2,616
In-stock
|
ON Semiconductor | MOSFET P-CH 60V 17A TO-220F | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 47W (Tc) | P-Channel | - | 60V | 17A (Tc) | 70 mOhm @ 8.5A, 10V | 4V @ 250µA | 43nC @ 10V | 1400pF @ 25V | 10V | ±25V | ||||
VIEW |
785
In-stock
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ON Semiconductor | MOSFET N-CH 60V 65A TO-220 | UniFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 135W (Tc) | N-Channel | - | 60V | 65A (Tc) | 16 mOhm @ 32.5A, 10V | 4V @ 250µA | 43nC @ 10V | 2170pF @ 25V | 10V | ±20V | ||||
VIEW |
3,709
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 9A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 74W (Tc) | N-Channel | - | 200V | 9A (Tc) | 400 mOhm @ 5.4A, 10V | 4V @ 250µA | 43nC @ 10V | 800pF @ 25V | 10V | ±20V | ||||
VIEW |
3,835
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 9A D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 3W (Ta), 74W (Tc) | N-Channel | - | 200V | 9A (Tc) | 400 mOhm @ 5.4A, 10V | 4V @ 250µA | 43nC @ 10V | 800pF @ 25V | 10V | ±20V | ||||
VIEW |
3,164
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 51A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | ||||
VIEW |
3,008
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V |