- Manufacture :
- Series :
- Technology :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
13 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||||
VIEW |
1,608
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 30V | 11A (Ta) | 11.9 mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
2,828
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 30V | 11A (Ta) | 11.9 mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
1,075
In-stock
|
ON Semiconductor | MOSFET N-CH 600V 17A TO220 | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 96W (Tc) | N-Channel | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | ||||
VIEW |
1,719
In-stock
|
ON Semiconductor | MOSFET N-CH 600V 9A TO220 | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 65W (Tc) | N-Channel | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 400V | 8V | ±18V | ||||
VIEW |
755
In-stock
|
Transphorm | MOSFET N-CH 600V 9A PQFN | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Surface Mount | 3-PowerDFN | PQFN (8x8) | 65W (Tc) | N-Channel | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | ||||
VIEW |
2,246
In-stock
|
Transphorm | MOSFET N-CH 600V 17A PQFN | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Surface Mount | 3-PowerDFN | PQFN (8x8) | 96W (Tc) | N-Channel | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | ||||
VIEW |
1,428
In-stock
|
Transphorm | MOSFET N-CH 600V 17A PQFN | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Surface Mount | 4-PowerDFN | PQFN (8x8) | 96W (Tc) | N-Channel | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | ||||
VIEW |
2,306
In-stock
|
Transphorm | MOSFET N-CH 600V 9A PQFN | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Surface Mount | 4-PowerDFN | PQFN (8x8) | 65W (Tc) | N-Channel | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | ||||
VIEW |
3,743
In-stock
|
Transphorm | MOSFET N-CH 600V 9A TO220 | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 65W (Tc) | N-Channel | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | ||||
VIEW |
1,102
In-stock
|
Transphorm | MOSFET N-CH 600V 9A TO220 | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 65W (Tc) | N-Channel | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | ||||
VIEW |
2,623
In-stock
|
Transphorm | MOSFET N-CH 650V 16A PQFN | - | Active | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PowerDFN | PQFN (8x8) | 81W (Tc) | N-Channel | 650V | 16A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | ||||
VIEW |
2,030
In-stock
|
Transphorm | MOSFET N-CH 600V 17A TO220 | - | Not For New Designs | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 96W (Tc) | N-Channel | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | ||||
VIEW |
753
In-stock
|
Transphorm | MOSFET N-CH 600V 17A TO220 | - | Not For New Designs | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 96W (Tc) | N-Channel | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V |