Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NTD4960N-35G
RFQ
VIEW
RFQ
3,944
In-stock
ON Semiconductor MOSFET N-CH 30V 11.1A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Stub Leads, IPak I-PAK 1.07W (Ta), 35.71W (Tc) N-Channel - 30V 8.9A (Ta), 55A (Tc) 8 mOhm @ 30A, 10V 2.5V @ 250µA 22nC @ 10V 1300pF @ 15V 4.5V, 10V ±20V
NTD4960N-1G
RFQ
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RFQ
2,123
In-stock
ON Semiconductor MOSFET N-CH 30V 11.1A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 1.07W (Ta), 35.71W (Tc) N-Channel - 30V 8.9A (Ta), 55A (Tc) 8 mOhm @ 30A, 10V 2.5V @ 250µA 22nC @ 10V 1300pF @ 15V 4.5V, 10V ±20V
SPP10N10L
RFQ
VIEW
RFQ
3,381
In-stock
Infineon Technologies MOSFET N-CH 100V 10.3A TO-220 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 50W (Tc) N-Channel - 100V 10.3A (Tc) 154 mOhm @ 8.1A, 10V 2V @ 21µA 22nC @ 10V 444pF @ 25V 4.5V, 10V ±20V
SPI10N10L
RFQ
VIEW
RFQ
1,238
In-stock
Infineon Technologies MOSFET N-CH 100V 10.3A I2PAK SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 50W (Tc) N-Channel - 100V 10.3A (Tc) 154 mOhm @ 8.1A, 10V 2V @ 21µA 22nC @ 10V 444pF @ 25V 4.5V, 10V ±20V