- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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14 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,618
In-stock
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Infineon Technologies | MOSFET N-CH 100V 69A TO251-3-11 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 125W (Tc) | N-Channel | - | 100V | 69A (Tc) | 11.8 mOhm @ 69A, 10V | 2.4V @ 83µA | 58nC @ 10V | 5600pF @ 50V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,610
In-stock
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IXYS | MOSFET N-CH 40V 120A TO-263 | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 200W (Tc) | N-Channel | - | 40V | 120A (Tc) | 6.1 mOhm @ 25A, 10V | 4V @ 250µA | 58nC @ 10V | 3240pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,126
In-stock
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IXYS | MOSFET N-CH 40V 120A TO-220 | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 40V | 120A (Tc) | 6.1 mOhm @ 25A, 10V | 4V @ 250µA | 58nC @ 10V | 3240pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,755
In-stock
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Infineon Technologies | MOSFET P-CH 100V 14A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 79W (Tc) | P-Channel | - | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,558
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 30V 20A TO220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 1.9W (Ta), 176W (Tc) | N-Channel | - | 30V | 20A (Ta), 105A (Tc) | 2.9 mOhm @ 20A, 10V | 2.2V @ 250µA | 58nC @ 10V | 4300pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
1,244
In-stock
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Infineon Technologies | MOSFET P-CH 100V 13A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 66W (Tc) | P-Channel | - | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,011
In-stock
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Infineon Technologies | MOSFET N-CH 100V 69A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 125W (Tc) | N-Channel | - | 100V | 69A (Tc) | 12 mOhm @ 69A, 10V | 2.4V @ 83µA | 58nC @ 10V | 5600pF @ 50V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,182
In-stock
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Infineon Technologies | MOSFET P-CH 100V 14A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 79W (Tc) | P-Channel | - | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,904
In-stock
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STMicroelectronics | MOSFET N-CH 60V 38A TO-220 | STripFET™ II | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 80W (Tc) | N-Channel | - | 60V | 38A (Tc) | 28 mOhm @ 19A, 10V | 4V @ 250µA | 58nC @ 10V | 980pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,526
In-stock
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Infineon Technologies | MOSFET P-CH 100V 13A DPAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 66W (Tc) | P-Channel | - | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,406
In-stock
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Infineon Technologies | MOSFET P-CH 100V 14A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 79W (Tc) | P-Channel | - | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,469
In-stock
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Infineon Technologies | MOSFET P-CH 100V 13A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 66W (Tc) | P-Channel | - | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,887
In-stock
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Infineon Technologies | MOSFET P-CH 100V 14A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 79W (Tc) | P-Channel | - | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,850
In-stock
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Infineon Technologies | MOSFET P-CH 100V 13A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 66W (Tc) | P-Channel | - | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
