Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTP18N60PM
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RFQ
3,915
In-stock
IXYS MOSFET N-CH TO-220 Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220 Isolated Tab 90W (Tc) N-Channel 600V 9A (Tc) 420 mOhm @ 9A, 10V 5.5V @ 250µA 49nC @ 10V 2500pF @ 25V 10V ±30V
IRFIB6N60A
RFQ
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RFQ
3,953
In-stock
Vishay Siliconix MOSFET N-CH 600V 5.5A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 60W (Tc) N-Channel 600V 5.5A (Tc) 750 mOhm @ 3.3A, 10V 4V @ 250µA 49nC @ 10V 1400pF @ 25V 10V ±30V
IRFIB6N60APBF
RFQ
VIEW
RFQ
798
In-stock
Vishay Siliconix MOSFET N-CH 600V 5.5A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 60W (Tc) N-Channel 600V 5.5A (Tc) 750 mOhm @ 3.3A, 10V 4V @ 250µA 49nC @ 10V 1400pF @ 25V 10V ±30V
TSM7N90CI C0G
RFQ
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RFQ
3,409
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 900V 7A ITO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 40.3W (Tc) N-Channel 900V 7A (Tc) 1.9 Ohm @ 3.5A, 10V 4V @ 250µA 49nC @ 10V 1969pF @ 25V 10V ±30V