Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 250V 2.2A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 250V 2.2A (Ta) 230 mOhm @ 1.3A, 10V 5.5V @ 250µA 38nC @ 10V 930pF @ 25V 10V ±30V
IRFR13N20DCPBF
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3,443
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Infineon Technologies MOSFET N-CH 200V 13A DPAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 110W (Tc) N-Channel - 200V 13A (Tc) 235 mOhm @ 8A, 10V 5.5V @ 250µA 38nC @ 10V 830pF @ 25V 10V ±30V
IRFR13N20DPBF
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3,158
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Infineon Technologies MOSFET N-CH 200V 13A DPAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 110W (Tc) N-Channel - 200V 13A (Tc) 235 mOhm @ 8A, 10V 5.5V @ 250µA 38nC @ 10V 830pF @ 25V 10V ±30V
IRF7453
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2,635
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Infineon Technologies MOSFET N-CH 250V 2.2A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 250V 2.2A (Ta) 230 mOhm @ 1.3A, 10V 5.5V @ 250µA 38nC @ 10V 930pF @ 25V 10V ±30V
IRFU13N20DPBF
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1,366
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Infineon Technologies MOSFET N-CH 200V 13A I-PAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 110W (Tc) N-Channel - 200V 13A (Tc) 235 mOhm @ 8A, 10V 5.5V @ 250µA 38nC @ 10V 830pF @ 25V 10V ±30V