Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2,594
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IXYS MOSFET N-CH 500V 12A I2-PAK Polar™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 (I2PAK) 200W (Tc) N-Channel - 500V 12A (Tc) 500 mOhm @ 6A, 10V 5.5V @ 250µA 29nC @ 10V 1830pF @ 25V 10V ±30V
IXTA12N50P
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2,818
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IXYS MOSFET N-CH 500V 12A D2-PAK Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 200W (Tc) N-Channel - 500V 12A (Tc) 500 mOhm @ 6A, 10V 5.5V @ 250µA 29nC @ 10V 1830pF @ 25V 10V ±30V
IXTP12N50P
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3,546
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IXYS MOSFET N-CH 500V 12A TO-220 Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel - 500V 12A (Tc) 500 mOhm @ 6A, 10V 5.5V @ 250µA 29nC @ 10V 1830pF @ 25V 10V ±30V
IXRFSM12N100
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1,846
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IXYS-RF 2A 1000V MOSFET IN SMPD PACKAGE SMPD Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad 16-SMPD 940W N-Channel - 1000V 12A (Tc) 1.05 Ohm @ 6A, 15V 5.5V @ 250µA 77nC @ 10V 2875pF @ 800V 15V ±20V