- Manufacture :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,119
In-stock
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IXYS | MOSFET N-CH 55V 180A TO-263 | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | - | N-Channel | - | 55V | 180A (Tc) | - | 4V @ 1mA | - | - | - | - | ||||
VIEW |
2,976
In-stock
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IXYS | MOSFET N-CH 85V 160A TO-263 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 360W (Tc) | N-Channel | - | 85V | 160A (Tc) | 6 mOhm @ 50A, 10V | 4V @ 1mA | 164nC @ 10V | 6400pF @ 25V | 10V | ±20V | ||||
VIEW |
983
In-stock
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Microsemi Corporation | MOSFET N-CH 300V 48A D3PAK | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3 [S] | 370W (Tc) | N-Channel | - | 300V | 48A (Tc) | 70 mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | 5870pF @ 25V | 10V | ±30V | ||||
VIEW |
3,610
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 9.5A TO-263 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | 75W (Tc) | N-Channel | - | 200V | 9.5A (Tc) | 400 mOhm @ 6A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | ||||
VIEW |
2,459
In-stock
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IXYS | MOSFET N-CH 75V 230A TO-263-7 | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | TO-263-7 (IXTA..7) | 480W (Tc) | N-Channel | - | 75V | 230A (Tc) | 4.2 mOhm @ 50A, 10V | 4V @ 1mA | 178nC @ 10V | 10500pF @ 25V | 10V | - | ||||
VIEW |
1,146
In-stock
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IXYS | MOSFET N-CH 75V 230A TO-263AA | HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXFA) | 480W (Tc) | N-Channel | - | 75V | 230A (Tc) | 4.2 mOhm @ 50A, 10V | 4V @ 1mA | 178nC @ 10V | 10500pF @ 25V | 10V | - | ||||
VIEW |
615
In-stock
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Microsemi Corporation | MOSFET N-CH 200V 67A D3PAK | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3 [S] | 370W (Tc) | N-Channel | - | 200V | 67A (Tc) | 38 mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | 6120pF @ 25V | 10V | ±30V | ||||
VIEW |
2,624
In-stock
|
Microsemi Corporation | MOSFET N-CH 200V 67A D3PAK | POWER MOS V® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3 [S] | 370W (Tc) | N-Channel | - | 200V | 67A (Tc) | 38 mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | 6120pF @ 25V | 10V | ±30V |