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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	BUK7E2R7-30B,127	RFQ VIEW	PDF RFQ	2,322 In-stock	NXP USA Inc.	MOSFET N-CH 30V 75A I2PAK		TrenchMOS™	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	300W (Tc)	N-Channel	-	30V	75A (Tc)	2.7 mOhm @ 25A, 10V	4V @ 1mA	91nC @ 10V	6212pF @ 25V	10V	±20V
	BUK752R7-30B,127	RFQ VIEW	PDF RFQ	1,209 In-stock	NXP USA Inc.	MOSFET N-CH 30V 75A TO220AB		TrenchMOS™	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	300W (Tc)	N-Channel	-	30V	75A (Tc)	2.7 mOhm @ 25A, 10V	4V @ 1mA	91nC @ 10V	6212pF @ 25V	10V	±20V
	IRF8252PBF	RFQ VIEW	PDF RFQ	3,300 In-stock	Infineon Technologies	MOSFET N-CH 25V 25A 8-SO		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO	2.5W (Ta)	N-Channel	-	25V	25A (Ta)	2.7 mOhm @ 25A, 10V	2.35V @ 100µA	53nC @ 4.5V	5305pF @ 13V	4.5V, 10V	±20V
	BUK652R6-40C,127	RFQ VIEW	PDF RFQ	962 In-stock	NXP USA Inc.	MOSFET N-CH 40V 120A TO220AB		TrenchMOS™	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	263W (Tc)	N-Channel	-	40V	120A (Tc)	2.7 mOhm @ 25A, 10V	2.8V @ 1mA	199nC @ 10V	11334pF @ 25V	4.5V, 10V	±16V

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