Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PSMN005-55P,127
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RFQ
867
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NXP USA Inc. MOSFET N-CH 55V 75A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 230W (Tc) N-Channel - 55V 75A (Tc) 5.8 mOhm @ 25A, 10V 2V @ 1mA 103nC @ 5V 6500pF @ 25V 4.5V, 10V ±15V
BUK9506-55A,127
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RFQ
2,372
In-stock
NXP USA Inc. MOSFET N-CH 55V 75A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 300W (Tc) N-Channel - 55V 75A (Tc) 5.8 mOhm @ 25A, 10V 2V @ 1mA - 8600pF @ 25V 4.5V, 10V ±15V
IRLU8726PBF
RFQ
VIEW
RFQ
3,336
In-stock
Infineon Technologies MOSFET N-CH 30V 86A IPAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 75W (Tc) N-Channel - 30V 86A (Tc) 5.8 mOhm @ 25A, 10V 2.35V @ 50µA 23nC @ 4.5V 2150pF @ 15V 4.5V, 10V ±20V
BUK9E06-55A,127
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VIEW
RFQ
2,486
In-stock
Nexperia USA Inc. MOSFET N-CH 55V 75A I2PAK Automotive, AEC-Q101, TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 300W (Tc) N-Channel - 55V 75A (Tc) 5.8 mOhm @ 25A, 10V 2V @ 1mA - 8600pF @ 25V 4.5V, 10V ±15V
IRLR8726PBF
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RFQ
3,155
In-stock
Infineon Technologies MOSFET N-CH 30V 86A DPAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 75W (Tc) N-Channel - 30V 86A (Tc) 5.8 mOhm @ 25A, 10V 2.35V @ 50µA 23nC @ 4.5V 2150pF @ 15V 4.5V, 10V ±20V