- Series :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,211
In-stock
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Infineon Technologies | MOSFET N-CH 55V 42A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 110W (Tc) | N-Channel | - | 55V | 42A (Tc) | 27 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | 4V, 10V | ±16V | |||
|
VIEW |
3,693
In-stock
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NXP USA Inc. | MOSFET N-CH 100V 49A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 166W (Tc) | N-Channel | - | 100V | 49A (Tc) | 27 mOhm @ 25A, 10V | 2V @ 1mA | - | 4293pF @ 25V | 4.5V, 10V | ±10V | |||
|
VIEW |
2,064
In-stock
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STMicroelectronics | MOSFET N-CH 100V 50A TO-220 | STripFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 180W (Tc) | N-Channel | - | 100V | 50A (Tc) | 27 mOhm @ 25A, 10V | 4V @ 250µA | 166nC @ 10V | 6000pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,735
In-stock
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Infineon Technologies | MOSFET N-CH 55V 42A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | - | N-Channel | - | 55V | 42A (Tc) | 27 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | - | - | |||
|
VIEW |
2,015
In-stock
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Infineon Technologies | MOSFET N-CH 55V 42A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 55V | 42A (Tc) | 27 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | 4V, 10V | ±16V | |||
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|
VIEW |
2,737
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 100V 46A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 157W (Tc) | N-Channel | - | 100V | 46A (Tc) | 27 mOhm @ 25A, 10V | 2V @ 1mA | 33nC @ 5V | 4360pF @ 25V | 4.5V, 10V | ±15V | |||
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|
VIEW |
3,713
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 42A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 110W (Tc) | N-Channel | - | 55V | 42A (Tc) | 27 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | 4V, 10V | ±16V | |||
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|
VIEW |
1,166
In-stock
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Infineon Technologies | MOSFET N-CH 55V 42A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 55V | 42A (Tc) | 27 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | 4V, 10V | ±16V | |||
