- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
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- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
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22 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,574
In-stock
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NXP USA Inc. | MOSFET N-CH 75V 53A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 138W (Tc) | N-Channel | - | 75V | 53A (Tc) | 23 mOhm @ 25A, 10V | 4V @ 1mA | - | 2385pF @ 25V | 10V | ±20V | |||
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VIEW |
865
In-stock
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Infineon Technologies | MOSFET N-CH 85V 53A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 100W (Tc) | N-Channel | - | 85V | 53A (Tc) | 16.5 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3230pF @ 40V | 10V | ±20V | |||
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VIEW |
3,084
In-stock
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Infineon Technologies | MOSFET N-CH 100V 53A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 100W (Tc) | N-Channel | - | 100V | 53A (Tc) | 16.2 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3220pF @ 50V | 10V | ±20V | |||
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VIEW |
1,992
In-stock
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Infineon Technologies | MOSFET N-CH 85V 53A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 100W (Tc) | N-Channel | - | 85V | 53A (Tc) | 16.5 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3230pF @ 40V | 10V | ±20V | |||
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VIEW |
3,998
In-stock
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Microsemi Corporation | MOSFET N-CH 400V 53A SOT-227 | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 450W (Tc) | N-Channel | - | 400V | 53A (Tc) | 70 mOhm @ 26.5A, 10V | 4V @ 2.5mA | 495nC @ 10V | 8890pF @ 25V | 10V | ±30V | |||
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VIEW |
1,685
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 520W (Tc) | N-Channel | - | 600V | 53A (Tc) | 70 mOhm @ 26.5A, 10V | 3.8V @ 250µA | 59nC @ 10V | 3034pF @ 100V | 10V | ±30V | |||
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VIEW |
2,830
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 53A TO247 | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 520W (Tc) | N-Channel | - | 600V | 53A (Tc) | 70 mOhm @ 26.5A, 10V | 3.8V @ 250µA | 59nC @ 10V | 3034pF @ 100V | 10V | ±30V | |||
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VIEW |
1,803
In-stock
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Infineon Technologies | MOSFET N-CH 100V TO-220 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 100W (Tc) | N-Channel | - | 100V | 53A (Tc) | 16.5 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3220pF @ 50V | 10V | ±20V | |||
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VIEW |
3,429
In-stock
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Infineon Technologies | MOSFET N-CH 55V 53A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 107W (Tc) | N-Channel | - | 55V | 53A (Tc) | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,262
In-stock
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Infineon Technologies | MOSFET N-CH 55V 53A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 107W (Tc) | N-Channel | - | 55V | 53A (Tc) | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,257
In-stock
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NXP USA Inc. | MOSFET N-CH 75V 53A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 138W (Tc) | N-Channel | - | 75V | 53A (Tc) | 22 mOhm @ 25A, 10V | 2V @ 1mA | - | 3120pF @ 25V | 4.5V, 10V | ±10V | |||
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VIEW |
823
In-stock
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Infineon Technologies | MOSFET N-CH 600V 53A TO247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 391W (Tc) | N-Channel | - | 600V | 53A (Tc) | 70 mOhm @ 25.8A, 10V | 3.5V @ 1.72mA | 170nC @ 10V | 3800pF @ 100V | 10V | ±20V | |||
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VIEW |
1,702
In-stock
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Infineon Technologies | MOSFET N-CH 55V 53A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 107W (Tc) | N-Channel | - | 55V | 53A (Tc) | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | 10V | ±20V | |||
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VIEW |
3,686
In-stock
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IXYS | MOSFET P-CH 200V 53A ISOPLUS247 | PolarP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ | 312W (Tc) | P-Channel | - | 200V | 53A (Tc) | 48 mOhm @ 45A, 10V | 4V @ 1mA | 205nC @ 10V | 12000pF @ 25V | 10V | ±20V | |||
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VIEW |
2,272
In-stock
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Infineon Technologies | MOSFET N-CH 55V 53A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 107W (Tc) | N-Channel | - | 55V | 53A (Tc) | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | 10V | ±20V | |||
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VIEW |
1,695
In-stock
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Infineon Technologies | MOSFET N-CH 100V 53A TO-220 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 100W (Tc) | N-Channel | - | 100V | 53A (Tc) | 16.5 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3220pF @ 50V | 10V | ±20V | |||
|
VIEW |
2,212
In-stock
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Microsemi Corporation | MOSFET N-CH 600V 53A TO-247 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 417W (Tc) | N-Channel | - | 600V | 53A (Tc) | 70 mOhm @ 25.8A, 10V | 3.5V @ 1.72mA | 154nC @ 10V | 4020pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,403
In-stock
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Infineon Technologies | MOSFET N-CH 55V 53A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 107W (Tc) | N-Channel | - | 55V | 53A (Tc) | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,570
In-stock
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STMicroelectronics | MOSFET N-CH 500V 53A ISOTOP | PowerMESH™ II | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Chassis Mount | ISOTOP | ISOTOP® | 460W (Tc) | N-Channel | - | 500V | 53A (Tc) | 80 mOhm @ 27A, 10V | 4V @ 250µA | 434nC @ 10V | 11200pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,747
In-stock
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ON Semiconductor | MOSFET N-CH 60V 53A TO-220F | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 62W (Tc) | N-Channel | - | 60V | 53A (Tc) | 10 mOhm @ 26.5A, 10V | 4V @ 250µA | 112nC @ 10V | 4120pF @ 25V | 10V | ±25V | |||
|
VIEW |
1,399
In-stock
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IXYS | MOSFET N-CH 800V 53A SOT-227B | PolarHV™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 1040W (Tc) | N-Channel | - | 800V | 53A (Tc) | 140 mOhm @ 30A, 10V | 5V @ 8mA | 250nC @ 10V | 18000pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,617
In-stock
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IXYS | MOSFET N-CH 500V 53A SOT-227 | Linear L2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 735W (Tc) | N-Channel | - | 500V | 53A (Tc) | 100 mOhm @ 30A, 10V | 4.5V @ 250µA | 610nC @ 10V | 24000pF @ 25V | 10V | ±30V |