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Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,682
In-stock
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Infineon Technologies | MOSFET P-CH 12V 9.5A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 12V | 9.5A (Ta) | 20 mOhm @ 9.5A, 4.5V | 600mV @ 250µA | 74nC @ 5V | 6000pF @ 10V | 2.5V, 4.5V | ±12V | ||||
VIEW |
1,349
In-stock
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Infineon Technologies | MOSFET P-CH 12V 9.5A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 12V | 9.5A (Ta) | 20 mOhm @ 9.5A, 4.5V | 600mV @ 250µA | 74nC @ 5V | 6000pF @ 10V | 2.5V, 4.5V | ±12V | ||||
VIEW |
2,138
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 800V 9.5A TO220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 800V | 9.5A (Ta) | 550 mOhm @ 4.8A, 10V | 4V @ 450µA | 19nC @ 10V | 1150pF @ 300V | 10V | ±20V |