- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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10 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,585
In-stock
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Infineon Technologies | MOSFET N-CH 55V 2A SOT-223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2A (Ta) | 140 mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | 230pF @ 25V | 4V, 10V | ±16V | |||
|
VIEW |
3,660
In-stock
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ON Semiconductor | MOSFET N-CH 1500V 2A TO-3PML | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | TO-3PML | - | N-Channel | - | 1500V | 2A (Ta) | 13 Ohm @ 1A, 10V | - | 37.5nC @ 10V | 380pF @ 30V | 10V | ±35V | |||
|
VIEW |
2,592
In-stock
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Infineon Technologies | MOSFET P-CH 30V 2A MICRO8 | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 1.25W (Ta) | P-Channel | Schottky Diode (Isolated) | 30V | 2A (Ta) | 200 mOhm @ 1.2A, 10V | 1V @ 250µA | 11nC @ 10V | 180pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,661
In-stock
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Renesas Electronics America | MOSFET N-CH 1500V 2A TO-3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM | 50W (Tc) | N-Channel | - | 1500V | 2A (Ta) | 12 Ohm @ 1A, 15V | - | - | 984.7pF @ 30V | 15V | ±20V | |||
|
VIEW |
1,851
In-stock
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Infineon Technologies | MOSFET P-CH 30V 2A MICRO8 | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 1.25W (Ta) | P-Channel | Schottky Diode (Isolated) | 30V | 2A (Ta) | 200 mOhm @ 1.2A, 10V | 1V @ 250µA | 11nC @ 10V | 180pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,241
In-stock
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Infineon Technologies | MOSFET N-CH 55V 2A SOT223 | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2A (Ta) | 140 mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | 230pF @ 25V | 4V, 10V | ±16V | |||
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VIEW |
3,543
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 2A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 2A (Ta) | 3.26 Ohm @ 1A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,886
In-stock
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ON Semiconductor | MOSFET N-CH 1500V 2A | - | Not For New Designs | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P-3L | 2.5W (Ta), 110W (Tc) | N-Channel | - | 1500V | 2A (Ta) | 13 Ohm @ 1A, 10V | - | 37.5nC @ 10V | 380pF @ 30V | 10V | ±20V | |||
|
VIEW |
1,225
In-stock
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ON Semiconductor | MOSFET N-CH 1500V 2A TO-3PF-3 | - | Not For New Designs | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | SC-94 | TO-3PF-3 | 3W (Ta), 50W (Tc) | N-Channel | - | 1500V | 2A (Ta) | 13 Ohm @ 1A, 10V | - | 37.5nC @ 10V | 380pF @ 30V | 10V | ±35V | |||
|
VIEW |
2,037
In-stock
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ON Semiconductor | MOSFET N-CH 1500V 2A TO-220F | - | Not For New Designs | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F-3FS | 2W (Ta), 35W (Tc) | N-Channel | - | 1500V | 2A (Ta) | 13 Ohm @ 1A, 10V | - | 37.5nC @ 10V | 380pF @ 30V | 10V | ±20V |