Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TK4A55D(STA4,Q,M)
RFQ
VIEW
RFQ
2,941
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 550V 4A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 550V 4A (Ta) 1.88 Ohm @ 2A, 10V 4.4V @ 1mA 11nC @ 10V 490pF @ 25V 10V ±30V
TK4A53D(STA4,Q,M)
RFQ
VIEW
RFQ
2,894
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 525V 4A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 525V 4A (Ta) 1.7 Ohm @ 2A, 10V 4.4V @ 1mA 11nC @ 10V 490pF @ 25V 10V ±30V
TK4A50D(STA4,Q,M)
RFQ
VIEW
RFQ
2,452
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 500V 4A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 500V 4A (Ta) 2 Ohm @ 2A, 10V 4.4V @ 1mA 9nC @ 10V 380pF @ 25V 10V ±30V
2SK1119(F)
RFQ
VIEW
RFQ
2,164
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 1000V 4A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 1000V 4A (Ta) 3.8 Ohm @ 2A, 10V 3.5V @ 1mA 60nC @ 10V 700pF @ 25V 10V ±20V
STF5N80K5
RFQ
VIEW
RFQ
2,914
In-stock
STMicroelectronics N-CHANNEL 800 V, 1.50 OHM TYP., MDmesh™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 20W (Tc) N-Channel - 800V 4A (Ta) 1.75 Ohm @ 2A, 10V 5V @ 100µA 5nC @ 10V 177pF @ 100V 10V ±30V
TK4A60D(STA4,Q,M)
RFQ
VIEW
RFQ
3,356
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 4A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 600V 4A (Ta) 1.7 Ohm @ 2A, 10V 4.4V @ 1mA 12nC @ 10V 600pF @ 25V 10V ±30V
IRF5800
RFQ
VIEW
RFQ
3,480
In-stock
Infineon Technologies MOSFET P-CH 30V 4A 6-TSOP HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 Micro6™(TSOP-6) 2W (Ta) P-Channel - 30V 4A (Ta) 85 mOhm @ 4A, 10V 1V @ 250µA 17nC @ 10V 535pF @ 25V 4.5V, 10V ±20V
IRF5806
RFQ
VIEW
RFQ
678
In-stock
Infineon Technologies MOSFET P-CH 20V 4A 6-TSOP HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 Micro6™(TSOP-6) 2W (Ta) P-Channel - 20V 4A (Ta) 86 mOhm @ 4A, 4.5V 1.2V @ 250µA 11.4nC @ 4.5V 594pF @ 15V 2.5V, 4.5V ±20V
2SK3748-1E
RFQ
VIEW
RFQ
1,145
In-stock
ON Semiconductor MOSFET N-CH 1500V 4A TO-2PF-3 - Last Time Buy Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole SC-94 TO-3PF-3 3W (Ta), 65W (Tc) N-Channel - 1500V 4A (Ta) 7 Ohm @ 2A, 10V - 80nC @ 10V 790pF @ 30V 10V ±20V
2SK1835-E
RFQ
VIEW
RFQ
1,699
In-stock
Renesas Electronics America MOSFET N-CH 1500V 4A TO-3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 125W (Tc) N-Channel - 1500V 4A (Ta) 7 Ohm @ 2A, 15V - - 1700pF @ 10V 15V ±20V
FDP2710-F085
RFQ
VIEW
RFQ
688
In-stock
ON Semiconductor MOSFET N-CH 250V 4A TO-220 Automotive, AEC-Q101, PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 403W (Tc) N-Channel - 250V 4A (Ta) 47 mOhm @ 50A, 10V 5V @ 250µA 101nC @ 10V 5690pF @ 25V 10V ±30V