Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SPP80N10L
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RFQ
3,685
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Infineon Technologies MOSFET N-CH 100V 80A TO-220 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 250W (Tc) N-Channel - 100V 80A (Tc) 14 mOhm @ 58A, 10V 2V @ 2mA 240nC @ 10V 4540pF @ 25V 4.5V, 10V ±20V
SPI80N10L
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RFQ
1,452
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Infineon Technologies MOSFET N-CH 100V 80A I2PAK SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 250W (Tc) N-Channel - 100V 80A (Tc) 14 mOhm @ 58A, 10V 2V @ 2mA 240nC @ 10V 4540pF @ 25V 4.5V, 10V ±20V
IPP80N06S3-05
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RFQ
3,550
In-stock
Infineon Technologies MOSFET N-CH 55V 80A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 165W (Tc) N-Channel - 55V 80A (Tc) 5.4 mOhm @ 63A, 10V 4V @ 110µA 240nC @ 10V 10760pF @ 25V 10V ±20V
IPI80N06S3-05
RFQ
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RFQ
3,058
In-stock
Infineon Technologies MOSFET N-CH 55V 80A TO-262 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 165W (Tc) N-Channel - 55V 80A (Tc) 5.4 mOhm @ 63A, 10V 4V @ 110µA 240nC @ 10V 10760pF @ 25V 10V ±20V
IXTK80N25
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RFQ
3,514
In-stock
IXYS MOSFET N-CH 250V 80A TO-264 MegaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXTK) 540W (Tc) N-Channel - 250V 80A (Tc) 33 mOhm @ 500mA, 10V 4V @ 250µA 240nC @ 10V 6000pF @ 25V 10V ±20V