- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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15 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,461
In-stock
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Infineon Technologies | MOSFET N-CH 30V 18A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3.1W (Ta) | N-Channel | - | 30V | 18A (Ta) | 6.5 mOhm @ 15A, 4.5V | 1V @ 250µA | 60nC @ 5V | 5500pF @ 16V | 4.5V | ±12V | |||
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VIEW |
1,271
In-stock
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ON Semiconductor | MOSFET N-CH 60V 18A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.1W (Ta), 55W (Tj) | N-Channel | - | 60V | 18A (Ta) | 65 mOhm @ 9A, 5V | 2V @ 250µA | 22nC @ 5V | 675pF @ 25V | 5V | ±15V | |||
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VIEW |
2,670
In-stock
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ON Semiconductor | MOSFET N-CH 60V 18A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.1W (Ta), 55W (Tj) | N-Channel | - | 60V | 18A (Ta) | 60 mOhm @ 9A, 10V | 4V @ 250µA | 30nC @ 10V | 710pF @ 25V | 10V | ±20V | |||
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VIEW |
845
In-stock
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STMicroelectronics | MOSFET N-CH 200V 18A TO220FP | STripFET™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 25W (Tc) | N-Channel | - | 200V | 18A (Ta) | 125 mOhm @ 10A, 10V | 4V @ 250µA | 39nC @ 10V | 940pF @ 25V | 10V | ±20V | |||
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VIEW |
2,116
In-stock
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Infineon Technologies | MOSFET N-CH 30V 18A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 18A (Ta) | 4.8 mOhm @ 18A, 10V | 2.35V @ 50µA | 26nC @ 4.5V | 2315pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
1,846
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 18A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N)IS | 90W (Tc) | N-Channel | - | 500V | 18A (Ta) | 270 mOhm @ 10A, 10V | 4V @ 1mA | 80nC @ 10V | 3720pF @ 10V | 10V | ±30V | |||
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VIEW |
781
In-stock
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ON Semiconductor | MOSFET N-CH 60V 18A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 2.1W (Ta), 55W (Tj) | N-Channel | - | 60V | 18A (Ta) | 65 mOhm @ 9A, 5V | 2V @ 250µA | 22nC @ 5V | 675pF @ 25V | 5V | ±15V | |||
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VIEW |
1,021
In-stock
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ON Semiconductor | MOSFET N-CH 60V 18A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.1W (Ta), 55W (Tj) | N-Channel | - | 60V | 18A (Ta) | 65 mOhm @ 9A, 5V | 2V @ 250µA | 22nC @ 5V | 675pF @ 25V | 5V | ±15V | |||
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VIEW |
2,346
In-stock
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ON Semiconductor | MOSFET N-CH 60V 18A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 2.1W (Ta), 55W (Tj) | N-Channel | - | 60V | 18A (Ta) | 65 mOhm @ 9A, 5V | 2V @ 250µA | 22nC @ 5V | 675pF @ 25V | 5V | ±15V | |||
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VIEW |
3,512
In-stock
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ON Semiconductor | MOSFET N-CH 60V 18A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 2.1W (Ta), 55W (Tj) | N-Channel | - | 60V | 18A (Ta) | 60 mOhm @ 9A, 10V | 4V @ 250µA | 30nC @ 10V | 710pF @ 25V | 10V | ±20V | |||
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VIEW |
3,055
In-stock
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ON Semiconductor | MOSFET N-CH 60V 18A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.1W (Ta), 55W (Tj) | N-Channel | - | 60V | 18A (Ta) | 60 mOhm @ 9A, 10V | 4V @ 250µA | 30nC @ 10V | 710pF @ 25V | 10V | ±20V | |||
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VIEW |
2,226
In-stock
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ON Semiconductor | MOSFET N-CH 60V 18A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 2.1W (Ta), 55W (Tj) | N-Channel | - | 60V | 18A (Ta) | 60 mOhm @ 9A, 10V | 4V @ 250µA | 30nC @ 10V | 710pF @ 25V | 10V | ±20V | |||
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VIEW |
2,310
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 18A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 500V | 18A (Ta) | 270 mOhm @ 9A, 10V | 4V @ 1mA | 45nC @ 10V | 2600pF @ 25V | 10V | ±30V | |||
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VIEW |
3,127
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 18A TO-220AB | U-MOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | - | N-Channel | - | 100V | 18A (Ta) | 42 mOhm @ 9A, 10V | - | 33nC @ 10V | - | - | - | |||
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VIEW |
3,156
In-stock
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Infineon Technologies | MOSFET N-CH 40V 18A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 40V | 18A (Ta) | 5 mOhm @ 17A, 10V | 2.25V @ 250µA | 50nC @ 4.5V | 4500pF @ 20V | 4.5V, 10V | ±20V |