- Series :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
-
- 10 mOhm @ 11A, 10V (2)
- 11.9 mOhm @ 11A, 10V (2)
- 12 mOhm @ 11A, 10V (2)
- 12 mOhm @ 11A, 4.5V (1)
- 12.5 mOhm @ 11A, 10V (2)
- 13.5 mOhm @ 11A, 10V (1)
- 13.8 mOhm @ 11A, 10V (2)
- 15 mOhm @ 8.8A, 4.5V (1)
- 25 mOhm @ 5.5A, 10V (1)
- 600 mOhm @ 5.5A, 10V (1)
- 620 mOhm @ 5.5A, 10V (1)
- 630 mOhm @ 5.5A, 10V (1)
- 650 mOhm @ 5.5A, 10V (2)
- 700 mOhm @ 5.5A, 10V (1)
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
20 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,227
In-stock
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Infineon Technologies | MOSFET N-CH 28V 11A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 28V | 11A (Ta) | 10 mOhm @ 11A, 10V | 3V @ 250µA | 26nC @ 4.5V | 1760pF @ 15V | 4.5V | ±12V | |||
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|
VIEW |
3,572
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 12.5 mOhm @ 11A, 10V | 3V @ 250µA | 23nC @ 4.5V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,663
In-stock
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Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 13.8 mOhm @ 11A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 770pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,608
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 11.9 mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,134
In-stock
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Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 12 mOhm @ 11A, 10V | 2V @ 250µA | 32nC @ 4.5V | 2530pF @ 15V | 2.8V, 10V | ±12V | |||
|
VIEW |
3,504
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 11A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 500V | 11A (Ta) | 600 mOhm @ 5.5A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,149
In-stock
|
Infineon Technologies | HEX/MOS N-CH 30V 11A 8-SOIC | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 13.8 mOhm @ 11A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 770pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,927
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 12 mOhm @ 11A, 10V | 2V @ 250µA | 32nC @ 4.5V | 2530pF @ 15V | 2.8V, 10V | ±12V | |||
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|
VIEW |
2,180
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 12.5 mOhm @ 11A, 10V | 3V @ 250µA | 23nC @ 4.5V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,579
In-stock
|
Renesas Electronics America | MOSFET N-CH 600V 11A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | - | 600V | 11A (Ta) | 700 mOhm @ 5.5A, 10V | - | 37.5nC @ 10V | 1450pF @ 25V | 10V | ±30V | |||
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|
VIEW |
1,026
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 450V 11A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 450V | 11A (Ta) | 620 mOhm @ 5.5A, 10V | 4V @ 1mA | 20nC @ 10V | 1050pF @ 25V | 10V | ±30V | |||
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|
VIEW |
2,804
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 11A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 11A (Ta) | 650 mOhm @ 5.5A, 10V | 4V @ 1mA | 28nC @ 10V | 1550pF @ 25V | 10V | ±30V | |||
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|
VIEW |
2,382
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 11A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 550V | 11A (Ta) | 630 mOhm @ 5.5A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,411
In-stock
|
ON Semiconductor | MOSFET N-CH 35V 11A TP | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK/TP | 1W (Ta), 15W (Tc) | N-Channel | - | 35V | 11A (Ta) | 25 mOhm @ 5.5A, 10V | 2.6V @ 1mA | 17.3nC @ 10V | 960pF @ 20V | 4V, 10V | ±20V | |||
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|
VIEW |
2,828
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 11.9 mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,637
In-stock
|
Infineon Technologies | MOSFET N-CH 12V 11A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 12V | 11A (Ta) | 15 mOhm @ 8.8A, 4.5V | 2V @ 250µA | 19nC @ 4.5V | 1590pF @ 6V | 2.8V, 4.5V | ±12V | |||
|
VIEW |
2,278
In-stock
|
Toshiba Semiconductor and Storage | PB-F POWER MOSFET TRANSISTOR TO- | U-MOSIX | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 11A (Ta) | 650 mOhm @ 5.5A, 10V | 4V @ 1.16mA | 34nC @ 10V | 1320pF @ 300V | 10V | ±30V | |||
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|
VIEW |
1,433
In-stock
|
Infineon Technologies | MOSFET N-CH 28V 11.4A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 28V | 11A (Ta) | 10 mOhm @ 11A, 10V | 3V @ 250µA | 26nC @ 4.5V | 1760pF @ 15V | 4.5V | ±12V | |||
|
|
VIEW |
1,969
In-stock
|
Infineon Technologies | MOSFET P-CH 14V 11A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 14V | 11A (Ta) | 12 mOhm @ 11A, 4.5V | 600mV @ 250µA | 125nC @ 5V | 8075pF @ 10V | 2.5V, 4.5V | ±12V | |||
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|
VIEW |
783
In-stock
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Infineon Technologies | MOSFET P-CH 30V 11A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 11A (Ta) | 13.5 mOhm @ 11A, 10V | 2.5V @ 250µA | 110nC @ 10V | 4030pF @ 25V | 4.5V, 10V | ±20V | |||
