Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SFT1341-E
RFQ
VIEW
RFQ
801
In-stock
ON Semiconductor MOSFET P-CH - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK/TP 1W (Ta), 15W (Tc) P-Channel 40V 10A (Ta) 112 mOhm @ 5A, 4.5V 1.4V @ 1mA 8nC @ 4.5V 650pF @ 20V 1.8V, 4.5V ±10V
SFT1341-W
RFQ
VIEW
RFQ
2,776
In-stock
ON Semiconductor MOSFET P-CH 40V 10A TP - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK/TP 1W (Ta), 15W (Tc) P-Channel 40V 10A (Ta) 112 mOhm @ 5A, 4.5V - 8nC @ 4.5V 650pF @ 20V 1.8V, 4.5V ±10V
NDDP010N25AZ-1H
RFQ
VIEW
RFQ
3,425
In-stock
ON Semiconductor MOSFET N-CH 250V 10A IPAK/TP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK/TP 1W (Ta), 52W (Tc) N-Channel 250V 10A (Ta) 420 mOhm @ 5A, 10V 4.5V @ 1mA 16nC @ 10V 980pF @ 20V 10V ±30V
IRF7471PBF
RFQ
VIEW
RFQ
3,730
In-stock
Infineon Technologies MOSFET N-CH 40V 10A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel 40V 10A (Ta) 13 mOhm @ 10A, 10V 3V @ 250µA 32nC @ 4.5V 2820pF @ 20V 4.5V, 10V ±20V
TK10A60D(STA4,Q,M)
RFQ
VIEW
RFQ
3,257
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 10A TO220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel 600V 10A (Ta) 750 mOhm @ 5A, 10V 4V @ 1mA 25nC @ 10V 1350pF @ 25V 10V ±30V
SI4410DY
RFQ
VIEW
RFQ
3,335
In-stock
Infineon Technologies MOSFET N-CH 30V 10A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel 30V 10A (Ta) 13.5 mOhm @ 10A, 10V 1V @ 250µA 45nC @ 10V 1585pF @ 15V 4.5V, 10V ±20V
RJL6012DPE-00#J3
RFQ
VIEW
RFQ
3,440
In-stock
Renesas Electronics America MOSFET N-CH 600V 10A LDPAK - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-83 4-LDPAK 100W (Tc) N-Channel 600V 10A (Ta) 1.1 Ohm @ 5A, 10V - 28nC @ 10V 1050pF @ 25V 10V ±30V
RJK6012DPP-E0#T2
RFQ
VIEW
RFQ
1,452
In-stock
Renesas Electronics America MOSFET N-CH 600V 10A TO220 - Discontinued at Digi-Key Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel 600V 10A (Ta) 920 mOhm @ 5A, 10V - 30nC @ 10V 1100pF @ 25V 10V ±30V
RJK5035DPP-E0#T2
RFQ
VIEW
RFQ
1,365
In-stock
Renesas Electronics America MOSFET N-CH 500V 10A TO220 - Discontinued at Digi-Key Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 29.5W (Tc) N-Channel 500V 10A (Ta) 850 mOhm @ 5A, 10V - 23nC @ 10V 765pF @ 25V 10V ±30V
TK10A50D(STA4,Q,M)
RFQ
VIEW
RFQ
3,309
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 500V 10A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel 500V 10A (Ta) 720 mOhm @ 5A, 10V 4V @ 1mA 20nC @ 10V 1050pF @ 25V 10V ±30V
TK10A55D(STA4,Q,M)
RFQ
VIEW
RFQ
2,444
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 550V 10A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel 550V 10A (Ta) 720 mOhm @ 5A, 10V 4V @ 1mA 24nC @ 10V 1200pF @ 25V 10V ±30V
IRF7470PBF
RFQ
VIEW
RFQ
682
In-stock
Infineon Technologies MOSFET N-CH 40V 10A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel 40V 10A (Ta) 13 mOhm @ 10A, 10V 2V @ 250µA 44nC @ 4.5V 3430pF @ 20V 2.8V, 10V ±12V
IRF7416PBF
RFQ
VIEW
RFQ
949
In-stock
Infineon Technologies MOSFET P-CH 30V 10A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel 30V 10A (Ta) 20 mOhm @ 5.6A, 10V 1V @ 250µA 92nC @ 10V 1700pF @ 25V 4.5V, 10V ±20V
SI4410DYPBF
RFQ
VIEW
RFQ
1,198
In-stock
Infineon Technologies MOSFET N-CH 30V 10A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel 30V 10A (Ta) 13.5 mOhm @ 10A, 10V 1V @ 250µA 45nC @ 10V 1585pF @ 15V 4.5V, 10V ±20V
Default Photo
RFQ
VIEW
RFQ
1,841
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 450V 10A TO220FL - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3, Short Tab TO-220FL 65W (Tc) N-Channel 450V 10A (Ta) 650 mOhm @ 5A, 10V 5V @ 1mA 23nC @ 10V 920pF @ 10V 10V ±30V
IRF7854PBF
RFQ
VIEW
RFQ
2,493
In-stock
Infineon Technologies MOSFET N-CH 80V 10A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel 80V 10A (Ta) 13.4 mOhm @ 10A, 10V 4.9V @ 100µA 41nC @ 10V 1620pF @ 25V 10V ±20V
TK750A60F,S4X
RFQ
VIEW
RFQ
1,243
In-stock
Toshiba Semiconductor and Storage PB-F POWER MOSFET TRANSISTOR TO- U-MOSIX Active Tube MOSFET (Metal Oxide) 150°C Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel 600V 10A (Ta) 750 mOhm @ 5A, 10V 4V @ 1mA 30nC @ 10V 1130pF @ 300V 10V ±30V
TK10J80E,S1E
RFQ
VIEW
RFQ
2,566
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 800V TO-3PN π-MOSVIII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 250W (Tc) N-Channel 800V 10A (Ta) 1 Ohm @ 5A, 10V 4V @ 1mA 46nC @ 10V 2000pF @ 25V 10V ±30V
CDM22010-650 SL
RFQ
VIEW
RFQ
1,395
In-stock
Central Semiconductor Corp MOSFET N-CH 10A 650V TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 2W (Ta), 156W (Tc) N-Channel 650V 10A (Ta) 1 Ohm @ 5A, 10V 4V @ 250µA 20nC @ 10V 1168pF @ 25V 10V 30V
TK10A80E,S4X
RFQ
VIEW
RFQ
1,256
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 800V TO220SIS π-MOSVIII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 50W (Tc) N-Channel 800V 10A (Ta) 1 Ohm @ 5A, 10V 4V @ 1mA 46nC @ 10V 2000pF @ 25V 10V ±30V
TK10A60E,S4X
RFQ
VIEW
RFQ
1,845
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V TO220SIS - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel 600V 10A (Ta) 750 mOhm @ 5A, 10V 4V @ 1mA 40nC @ 10V 1300pF @ 25V 10V ±30V